Microwave Journal
www.microwavejournal.com/articles/24137-w-ldmos-transistor-blf2425m6ls180p

180 W LDMOS Transistor: BLF2425M6LS180P

April 7, 2015

BLF2425M6LS180PRFMW Ltd. announces design and sales support for the BLF2425M6LS180P, a 180 W LDMOS transistor from NXP covering the industrial, scientific and medical (ISM) band of 2400 to 2500 MHz. The BLF2425M6LS180P has applications from solid state heating to RF plasma lamps to RF plasma torches. The BLF2425M6LS180P offers 13.3 dB of gain and runs off a 28 V supply with efficiencies up to 53.5%.

The device is internally matched for ease of use and contains integrated ESD protection.

Easy power control is a highlight of these NXP solid state devices and enables highly reliable, more efficient and more controllable clean power sources for industrial heating applications when compared to alternatives such as magnetrons.

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