Microwave Journal

New Products: Amplifiers

August 1, 1998


2 W Solid-state Power Amplifier
The model IPA4045-3325 2 W solid-state power amplifier is designed for integration into very small aperture terminal systems or for use in emerging satellite Internet applications. The unit operates in the 13.75 to 14.5 GHz Ku-band and features a MMIC-based design that provides good linearity and reliability. Similar products also are available with output powers at the 1 dB compression point (P1dB) of 5, 8 and 16 W.
ITS Electronics Inc.,
Concord, Ontario, Canada
(905) 660-0405.

3 W CDMA GaAs FET Power Amplifier
The model PCS1960-3 3 W code-division multiple access (CDMA) GaAs FET power amplifier operates over the 1930 to 1990 MHz frequency range and is designed for use in microcell repeater applications. The unit features a gain of 62.8 dB +/-2 dB, gain flatness of +/-0.25 dB, residual noise of –115 dBc (min) (measured at a 1.25 MHz bandwidth) and –176 dBc (min) (measured at a 1 Hz bandwidth), group delay variation of 100 ns (max) and maximum RF input power of +10 dBm. The amplifier operates over a temperature range of –40° to +85°C with unconditional stability, RF input/output impedance of 50 W and RF input/output SWR of 1.5 (max).
Chesapeake Microwave Technologies Inc.,
Glen Rock, PA
(717) 235-1655.

Power Amplifier Module
The model MPA105 power amplifier module designed for microwave radio applications features a 40 dB gain with a P1dB of +21 dBm from 37 to 40 GHz. The unit offers good SWR characteristics and is available with a waveguide or SMA input.
TRW GaAs Telecom Products,
Redondo Beach, CA
(310) 812-4321.

5 W MMIC Driver Amplifier
The model RMPA1911-96 5 W MMIC driver amplifier is designed for use within PCS base station power amplifier assemblies. The unit lowers total function costs by replacing many passive and discrete components within a small, easily integratable solution. The unit features a signal gain of 27 dB and low noise figure of 4.5 dB, and is easy to implement due to its small size and the inclusion of all input and output matching and associated bias circuitry within it surface-mount package. The amplifier utilizes the company’s 0.5 mm power pseudomorphic high electron mobility transistor (PHEMT) process.
Raytheon Microelectronics,
Lexington, MA
(781) 860-2414.

8 GHz TWT Replacement SSPAs
The models SM7177-41K and SM7784-41K solid-state power amplifiers (SSPA) are designed for TWT replacement at 7.1 to 7.7 GHz and 7.7 to 8.4 GHz, respectively. The SSPAs are fit, form, function drop-in replacements for the Siemens/Thomson TWT RW90D unit used in Alcatel MDR-8 and Harris Farinon DR-8 radios.
SSB Technologies Inc.,
Trenton, NJ
(609) 538-8586.