GaN on SiC Transistor: MMRF5014H
Ideal for multi-octave wideband RF amplifiers targeting military and industrial applications
Richardson RFPD, Inc. announced the availability and full design support capabilities for a wideband RF power GaN on SiC transistor from Freescale Semiconductor, Inc.
The MMRF5014H is a 125 W continuous wave GaN on SiC transistor that offers exceptional wideband and thermal performance. With an extended operational bandwidth (1 to 2690 MHz), high gain (16 dB at 2500 MHz, typical), and high ruggedness, the new transistor is ideally suited for wideband amplifiers in scientific equipment, as well as in military communications applications, including jammers, radar implementations and electronic warfare systems.
According to Freescale, additional key features of the MMRF5014H include:
- Efficiency: 58%, typical
- Thermal performance: <1º C/W
- Ruggedness: 20:1 VSWR
- Input matching for extended wideband performance
- Suitable for octave- and decade-bandwidth amplifiers
To find more information, or to purchase this product today online, please visit the MMRF5014H webpage. The device is also available by calling 1-800-737-6937.