Microwave Journal
www.microwavejournal.com/articles/23693-two-l-band-90-w-gan-modules

Two L-Band 90 W GaN Modules

January 6, 2015

MACOM_90W GaN Modules_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two new L-band 90 W GaN modules from M/A-COM Technology Solutions.

Both of the new 2-stage modules feature a land grid array (LGA) pattern for enhanced thermal flow, are offered in compact (14 x 24 mm2) “True SMT” packages, and do not require copper coining or complicated thermal management techniques on the system PC board.

They are fully-matched, with decoupled DC and RF. Under pulsed conditions, they can deliver output power greater than 90W, with 30 dB typical associated gain and 60% typical power added efficiency. A flexible design allows for gate and/or drain pulsing. Additional features include a gate voltage sense port for use in temperature compensation or pulse droop compensation.

Additional key features of the MAMG-000912-090PSM include:

  • Optimized for pulsed avionics applications in the 960–1215 MHz band
  • GaN on SiC D-Mode Transistor Technology
  • Typical Bias: 50V, Class AB
  • Pulse width up to 600 μs
  • MTTF = 600 years (TJ < 200°C)
  • Evaluation board available

Additional key features of the MAMG-001214-090PSM include:

  • Optimized for pulsed radar applications in the 960–1215 MHz band
  • GaN on SiC D-Mode Transistor Technology
  • Typical Bias: 45V, Class AB
  • Up to 3 ms Pulse Width and 10% Duty Cycle
  • MTTF = 600 years (TJ < 200°C)
  • Evaluation board available

To find more information, or to purchase these product today online, please visit the MAMG-000912-090PSM and MAMG-001214-090PSM webpages. The devices are also available by calling 1-800-737-6937.

VendorViewButton