Microwave Journal
www.microwavejournal.com/articles/23476-low-noise-gan-amplifier-cmd218

Low Noise GaN Amplifier: CMD218

December 4, 2014

GaN-Low-Noise-Amplifier-CMD218Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD218, a 5 to 9 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN products.

 The CMD218 offers a gain of 22 dB, output of 1 dB, compression point of +19.5 dBm, and noise figure of less than 1.25 dB across the 5 to 9 GHz frequency range. In addition, without an input limiter, the CMD218 can survive high incident power levels up to 5 W with no degradation in performance.

The CMD218 is a 50 ohm matched design, thus eliminating the need for external DC blocks and RF port matching. In terms of biasing, the CMD218 can operate from a supply voltage of 5 V to 28 V, and typically draws 100 mA of quiescent current. A negative gate voltage is required for proper operation.

The LNA is ideally suited for microwave radios and C- and X-band applications where small size and low power consumption are needed. Applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.

To download the full datasheet on the CMD218 low noise amplifier, visit the Custom MMIC Product Library.

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