Richardson RFPD introduces four new RF GaN on SiC HEMTs from TriQuint
Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.
The T1G4020036 is a 240W (P3dB, at 2.9 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 13.1 dB (typical) at 2.9 GHz, with an operating voltage of 36V. It is available in either a 4-lead flanged or an earless Gemini package. The T1G4020036 is manufactured on TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new HEMTs are ideally suited for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier, and jammer applications.
To find more information, or to purchase these products today online, please visit the T1G4004532-FL, T1G4004532-FS, T1G4020036-FL and T1G4020036-FS webpages. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. More information is available online at www.richardsonrfpd.com.