SiC Half-Bridge Module: CAS300M12BM2
Richardson RFPD Introduces 1.2 kV, 5.0 mΩ All-Silicon Carbide, Half-Bridge Module from Cree - Includes Z-FET™ MOSFET and Z-Rec™ diode.
Richardson RFPD, Inc. announced the availability and full design support capabilities for a new 1.2 kV, 5.0 mΩ all-silicon carbide (SiC), half-bridge module from Cree, Inc.
The new CAS300M12BM2 is available in a 62 x 106 x 30 millimeter package and includes a Z-FET™ MOSFET and a Z-Rec™ diode in a half-bridge configuration.
The CAS300M12BM2 incorporates a low-loss 300A SiC MOSFET switch that, in some applications, is capable of replacing Si IGBTs rated at 600A or more, thereby permitting a dramatic reduction in the number of modules required overall. Higher switching frequency supports reduced magnetics size, while higher operating junction temperature contributes to decreased cooling requirements—resulting in an overall smaller, lighter system. Furthermore, the use of a module lends itself to reduced complexity and easier integration, resulting in improved reliability.
The new module is ideally suited for induction heating, motor drive, solar and wind inverter, UPS and SMPS, and traction applications.
According to Cree, additional key features of the new device include:
- Ultra-low loss
- High-frequency operation
- Zero reverse recovery current from diode
- Zero turn-off tail current from MOSFET
- Normally-off, failsafe device operation
- Ease of paralleling
- Copper base plate and aluminum nitride insulator
To find more information, or to purchase this product today online, please visit the CAS300M12BM2 webpage. The device is also available by calling 1-800-737-6937 (within North America).