GaN on SiC: 0912GN-650V
Richardson RFPD, Inc. introduces a new 50 V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).
The 0912GN-650V is internally-matched and capable of providing over 17 dB gain, 650 W of pulsed RF output power at 128 μs pulse width and 10% duty factor across the 960 to 1215 MHz band.
This state-of-the art highest performance GaN on SiC HEMT power transistor features gold metallization and eutectic attach for outstanding reliability and ruggedness and was specifically designed for use in broadband avionics data link applications. It is the first of several new Microsemi 50V GaN on SiC HEMT transistors being released by RichardsonRFPD.
Key features of the 0912GN-650V include:
- Frequency range: 960-1215 MHz
- Gain: 17 dB (minimum), 18 dB (typical)
- Pout: 650W
- Test signal: Pulse width 128μs, duty cycle 10%
- Drain efficiency: 60%
- VSWR-T: 3:1
- Thermal resistance: 0.155 ºC/W
- Package type: 55KR
Richardson RFPD's design advisors provide extensive technical expertise and design-in assistance for Microsemi products, including this new 50V GaN on SiC HEMT transistor. The device design has closed, and Richardson RFPD is now accepting orders and requests for test fixtures for this device. To find more information, please visit the 0912GN-650V page on the Richardson RFPD website. Avionics systems designers can device information and sample evaluation support by calling 1-800-737-6937 (within North America); or please find your local sales engineer. To learn about additional products from Microsemi, please visit the Microsemi storefront webpage.