Microwave Journal

IXYS Colorado introduces the IXRFD630 and IXRFD631 high power RF drivers

June 10, 2013

IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.

Packaged in our surface mount DE Series RF package to minimize stray lead inductance the IXRFD630 and IXRFD631 offer optimum switching performance.

The IXRFD630 and IXRFD631 are CMOS high speed, high current gate drivers specifically designed to drive MOSFETs in Class D and E RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD630 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with minimal internal delays; cross conduction and current shoot-through are virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD630 and IXRFD631 unmatched in performance and value.

The IXRFD630 and IXRFD631 are ideal for applications such as:

  • Driving RF MOSFETs
  • Class D and E RF Generators
  • Multi-MHz Switch Mode Supplies
  • Pulse Transformer Driver
  • Pulsed Laser Diode Driver
  • Pulse Generator

“We’re excited to be able to offer the next generation driver for power RF applications. The IXRFD630 and IXRFD631 offer an excellent combination of power, size and performance,” commented Stephen Krausse, General Manager IXYS Colorado.