Microwave Journal

Richardson RFPD introduces 1200 V, 80 Milliohm SiC MOSFET from Cree

May 7, 2013

Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree).

The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs. At this price-to-performance point, the new device lowers system costs for OEMs and provides additional savings to the end-user through increased efficiency and lower installation costs, due to the lower size and weight of SiC-based systems.

Additional key features of the C2M0080120D include:

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive
  • TO-247-3 package

The device is in stock and available for immediate delivery. To find more information, or to purchase this product today on the Richardson RFPD website, please visit the C2M0080120D webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Cree, please visit the Cree storefront webpage.