Microwave Journal
www.microwavejournal.com/articles/17361-richardson-rfpd-introduces-new-gan-on-sic-power-transistor-devices-from-m-a-com-tech

Richardson RFPD introduces new GaN on SiC M/A-COM Tech power transistors

April 12, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions Inc. This product family targets L- and S-Band applications from 960 to 3500 MHz and reinforces M/A-COM Tech's rich heritage of leadership in power hybrid technology.

These high performance GaN on SiC transistors offer rugged 50 V operation with greater than 175 W breakdown voltage, for reliable and stable operation in extreme mismatched load conditions. The devices are offered in thermally-enhanced Cu/Mo/Cu flanged ceramic packages, and are EAR99-compliant.

Features of the MAGX-000912-125L00 and MAGX-000912-250L00 include:

  • 969-1215 MHz frequency range
  • GaN on SiC HEMT 125- and 250-Watt pulsed power transistors
  • Internally matched
  • Common source configuration
  • Excellent power added efficiency: 60%
  • Developed for avionics applications, including *Mode-S, TCAS, JTIDS, DME and TACAN

Features of the MAGX-001214-125L00 and MAGX-001214-250L00 include:

  • 1200-1400 MHz frequency range
  • GaN on SiC HEMT 125- and 250-Watt pulsed power transistors
  • Unparalleled operation even in extreme mismatch load conditions
  • Developed for L-Band radar applications

Features of the MAGX-001220-100L00 include:

  • 1200-2000 MHz frequency range
  • GaN on SiC HEMT 100-Watt power transistor
  • High gain, efficiency and superior ruggedness over a wide bandwidth
  • Drain efficiency: 55%
  • Will withstand 10:1 load mismatches

Features of the MAGX-002731-030L00 and MAGX-002731-100L00 include:

  • 2700-3100 MHz frequency range
  • GaN on SiC HEMT 30- and 100-Watt pulsed power transistors
  • Superior performance with extreme ruggedness
  • Excellent breakdown performance: Up to 175 Volts
  • Developed for civilian and military pulsed radar applications

All released products are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the M/A-COM Tech GaN on SiC Power Transistors webpage at www.richardsonrfpd.com/Pages/Search-Results.aspx?focuscd=MW. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from M/A-COM Tech, please visit the M/A-COM Tech storefront on the Richardson RFPD website.

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