HMC788LP2E GaAs pHEMT MMIC Gain Block Amplifier
January 17, 2011
Darlington Amplifier Delivers up to +20 dBm Output Power
Chelmsford, MA, October 6, 2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new SMT pHEMT MMIC Driver Amplifier which is ideal for high linearity applications in cellular/4G, broadband, military and fixed wireless equipment applications from DC to 10 GHz.
The HMC788LP2E is a GaAs pHEMT MMIC Gain Block Amplifier which is rated from DC to 10 GHz. This internally matched Darlington amplifier delivers up to 14 dB gain, +20 dBm output P1dB, and up to +30 dBm output IP3. The active on-chip bias circuit allows the HMC788LP2E to exhibit excellent gain and output power stability over temperature, while consuming only 76 mA from a single +5 V supply. This 2x2 mm DFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of many of Hittite’s single and double-balanced mixers. The wide bandwidth and simple application circuit makes the HMC788LP2E ideal for use in multi-band infrastructure applications such as software defined radios, and in point-to-point and test and measurement subsystems.
Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line by clicking the link below our logo on this page.