Microwave Journal
www.microwavejournal.com/articles/15464-hmc-xdb112-hmc-xdh158-hmc-xtb106

HMC-XDB112, HMC-XDH158, HMC-XTB106

January 17, 2011
The HMC-XDB112 is a passive x2 Frequency Multiplier die which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology and supports output frequencies from 20 to 30 GHz. This compact doubler delivers 0 dBm output power with better than 30 dB of isolation of the fundamental input frequency (FO). The HMC-XDB112 requires no DC bias and is ideal for use in LO multiplier chains for Point-to-Point and Point-to-Multipoint Radios.

The HMC-XDH158 is an active x2 Frequency Multiplier die which utilizes GaAs HEMT (High Electron Mobility Transistor) technology and supports output frequencies from 56 to 64 GHz making it ideal for secure military communications applications. The HMC-XDH158 accepts input drive levels from 0 to +5 dBm, exhibits only 8 dB conversion loss, and provides a high 30 dB of FO isolation.

For E-band and short haul communications applications, the HMC-XTB106 is a passive GaAs HEMT x3 Frequency Multiplier which provides output frequency coverage from 72 to 90 GHz. The HMC-XTB106 is a wideband multiplier which requires no DC bias, and exhibits only 19 dB conversion loss when driven with a +13 dBm input signal.