Mimix Broadband, Inc. Introduces 32 to 45 GHz GaAs MMIC Transmitter with Integrated Mixer, LO Doubler/Buffer and Output Amplifier
July 20, 2007
July 20, 2007, Houston, Texas - Mimix Broadband, Inc. introduces today a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) transmitter that delivers +14 dBm OIP3 and 5 dB conversion gain with +4 dBm LO drive level. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the transmitter covers the 32 to 45 GHz frequency bands and includes a balanced resistive mixer followed by a distributed amplifier, an LO doubler and an LO buffer amplifier. Identified as XU1004-BD, this device is well suited for point-to-point radio, LMDS, SatCom or VSAT applications. "The high level of integration in the XU1004-BD allows our customers to reduce the number of components on their board, facilitating a smaller design area and fewer interconnects," stated Paul Beasly, Product Manager, Mimix Broadband, Inc. "The device is suitable for PTP commercial applications, as well as defense applications where board-space is a critical design requirement." Mimix performs 100% on-wafer RF and DC testing on the XU1004-BD, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. Production quantities are available today from stock. Technical support is also available from Mimix's applications engineers at 281.988.4600. The datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.