Amplifiers

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Researchers at Chalmers University of Technology, Sweden, have developed a new generation of amplifiers that has the ability to measure data that is currently buried by noise.

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MILMEGA Ltd has been awarded a Queen’s Award for Enterprise in Innovation for developing amplifiers, based on a novel design methodology, using gallium nitride-based transistors, for use in Electromagnetic Compatibility (EMC) test equipment.

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The OpenET Alliance, the industry association that promotes energy efficient wireless transmission through Envelope Tracking (ET), has announced its first wave of members, and the release of an updated interface specification for cellular terminals.

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United Monolithic Semiconductors (UMS) has announced that the PPH15X-10 MMIC GaAs power PHEMT process has been successfully space evaluated and is now part of the European Preferred Part List established by the European Space Agency/European Space Components Information Exchange System (ESA/ESCIES).

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Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.

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AR Modular RF has received additional JITC Certification on its AR-50 booster amplifier for the PRC-117G radio. This means that the market leading 50 W, automatic tuning, multi-band tactical booster amplifier (30 to 512 MHz) has JITC certification for use with both the PSC-5D and the PRC-117G transceivers. The...
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TriQuint Semiconductor Inc. has released two new linear RF amplifier family members that lower power consumption while protecting mobile networks from disruption and service failures. Setting these amplifiers apart from others now available is TriQuint’s patent-pending integrated protection features that can guard against ESD and DC over-voltage electrical spikes....
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RF Micro Devices Inc. (RFMD) announced it has commenced volume production of multiple 3G/4G power amplifiers (PA), in support of two leading smartphone families. The two most recent smartphones supported by RFMD feature RFMD's PowerSmart™ power platform and RFMD's RF724x family of ultra-high efficiency power amplifiers. The first smartphone,...
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Record Numbers Attend Nov ARMMS Conference The ARMMS RF & Microwave Society Conference was held in Nov at the Rockingham Forest Hotel in Corby, UK with 72 delegates attending. ARMMS originally began in 1984 with a focus on microwave measurements and has expanded to cover a variety of related topics. Read our summary of the conference and exhibition. Read ARMMS Wrap Up

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Nujira has become a Contributor Member in the newly formed Envelope Tracking Subgroup of the MIPI® Alliance Analog Control Interface Working Group. The Subgroup will focus on developing MIPI Specifications that facilitate wider adoption of this energy saving technology in smartphones and other mobile devices. The Envelope Tracking Subgroup...
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Innovations in EDA Webcast Series

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Optimizing a PA design for one parameter invariably requires sacrifi cing the performance of another. This delicate balance between performance and effi ciency is not the only conundrum, because designers of 4G PAs must also contend with demands for greater instantaneous bandwidth. As a result, designers of next-generation PAs are relying on simulation more than ever before, and their tasks include frequency domain simulation, time domain simulation, and now circuit envelope simulation.

The published specifications for leakage current in RF power devices are often a source of concern and confusion for engineers and technicians. This paper examines the real meaning behind the leakage current specifications and offers guidance on properly testing a device for leakage current.

RFMD has developed 400W pulsed output power GaN HEMT amplifiers operating over 2.9GHz to 3.5GHz band or 17% bandwidth. Under pulsed RF drive with 10% duty cycle and 100us pulse width, the amplifier delivers output power in the range of 401W to 446W over the band, with drain efficiency of 48% to 55% when biased at drain voltage of 65V.