Semiconductors / Integrated Circuits

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MEI was at CS Man Tech the week of May 13th to demo the company's high-quality semiconductor and batch immersion process tools that perform. All MEI’s semiconductor equipment are custom tailored to specific semiconductor processes and chemistry.

Cree Inc. will be a first time exhibitor this year in the RF/Microwave Zone at CTIA 2013. The RF Zone, which is organized and managed by Microwave Journal, features approximately twenty RF component and communication IC manufacturers along with test equipment providers. Cree is a world’s leading manufacturer of GaN HEMT devices, which are ideally suited for a host of telecom applications in both macro-base stations and small cells. These devices are perfect for applications seeking to improve bandwidth, efficiency, frequency of operation, or for transmitters challenged to reduce size and weight.

STMicroelectronics announced that its Teseo II single-chip satellite-tracking ICs were successful in the first ground location test using Europe’s Galileo navigation system.

Lime Microsystems has signed a deal with Interlligent RF & MW Solutions to use the company's latest test and measurement technology in the development of its FPRF transceiver ICs.

Renesas Electronics and Renesas Mobile Corp. have announced the availability of a new member of the R-Car Series of automotive Systems-on-Chip (SoCs).

e2v aerospace and defense Inc.(e2v a&d announces a life extension program for selected Micron Technology Inc. memory devices.

Renesas Electronics Europe, supplier of advanced semiconductor solutions, has launched an expanded drive to build sales in Russia and other CIS countries.

Tensilica^® Inc. has strengthened its strategic relationship with Huawei with the announcement that HiSilicon, the semiconductor division of Huawei, is expanding its use of Tensilica’s Dataplane Processor Units.

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announced it has shipped three billion MEMS sensors to date.

STMicroelectronics has been awarded the prestigious 2012 Corporate Award from the IEEE Standards Association) in recognition of its advancement of standards in electrical and electronics engineering.

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.

Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTC®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst Mode® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.