- Buyers Guide
Semiconductors / Integrated Circuits
Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).
Fujitsu Limited, Panasonic Corporation, and DBJ have signed a MoU in which DBJ will make an investment and provide a line of credit for a new fabless company specializing in LSI design and development, which Fujitsu and Panasonic will jointly establish.
Indium Corporation technology experts will serve as session chair and give a poster presentation at IMAPS New England May 6 in Boxborough, Mass.
RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Nujira Ltd. has closed a new funding round, raising $20 million for working capital to support the production ramp of its Coolteq chips, and to fund continued development of the company’s long term product roadmap.
NXP Semiconductors has appointed Li Zheng as Senior Vice President Sales & Marketing, Greater China and Country Manager for China, who will be based in Shanghai.
Link Microtek has been appointed as a UK and Ireland representative for Peregrine Semiconductor Corp. founder of RF SOI and pioneer of advanced RF solutions.
Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.
M/A-COM Technology Solutions Inc.(“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, announced that it will showcase its industry-leading portfolio of new GaN power products at EDI CON 2014 in Beijing, China, April 8-10, 2014. The company will particpate in the event as an exhibitor in Booth #612 and in the conference as a presenter in the peer-reviewed technical session, workshops and special GaN expert panel to be sponsored by Richardson RFPD.
Integrated circuits and semiconductor technology are critical to the overall performance of electronic systems, whether the application is for mobile communications, radar or satellite navigation. The design track reflects the industry’s focus on recent advances in design technology with an emphasis on specific components such as filters and power amplifiers. Doherty and class-F PA architectures along with techniques such as digital pre-distortion and envelop tracking that are garnering so much industry attention at the moment will be among the hot topics presented in the field of power amplifier design.
DOCUMENTS AND FILES
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.
Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTCÃÂ®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst ModeÃÂ® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.
The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.