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Semiconductors / Integrated Circuits

Semiconductors/MMIC/RFIC related products


Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

April 23, 2014

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).


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Fujitsu, Panasonic DBJ sign MoU to establish new semiconductor company

April 23, 2014

Fujitsu Limited, Panasonic Corporation, and DBJ have signed a MoU in which DBJ will make an investment and provide a line of credit for a new fabless company specializing in LSI design and development, which Fujitsu and Panasonic will jointly establish.

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Indium Corporation technology experts to present at IMAPS New England

April 18, 2014

Indium Corporation technology experts will serve as session chair and give a poster presentation at IMAPS New England May 6 in Boxborough, Mass.

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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

April 18, 2014

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.

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Nujira raises $20 million in new funding

April 4, 2014

Nujira Ltd. has closed a new funding round, raising $20 million for working capital to support the production ramp of its Coolteq chips, and to fund continued development of the company’s long term product roadmap.

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NXP strengthens China team

March 24, 2014

NXP Semiconductors has appointed Li Zheng as Senior Vice President Sales & Marketing, Greater China and Country Manager for China, who will be based in Shanghai.

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Peregrine appoints Link Microtek as UK and Ireland representative

March 10, 2014

Link Microtek has been appointed as a UK and Ireland representative for Peregrine Semiconductor Corp. founder of RF SOI and pioneer of advanced RF solutions.

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Cree selects Plextek RF Integration as preferred European design resource

March 6, 2014

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

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MACOM to showcase highly integrated, plastic-packaged GaN solutions at EDI CON

February 27, 2014

M/A-COM Technology Solutions Inc.(“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, announced that it will showcase its industry-leading portfolio of new GaN power products at EDI CON 2014 in Beijing, China, April 8-10, 2014. The company will particpate in the event as an exhibitor in Booth #612 and in the conference as a presenter in the peer-reviewed technical session, workshops and special GaN expert panel to be sponsored by Richardson RFPD.

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RF Semiconductor Technology Drives the EDI CON 2014 Technical Program

From technical sessions, panels and workshop, RF IC front-ends will be under the spotlight
February 27, 2014

Integrated circuits and semiconductor technology are critical to the overall performance of electronic systems, whether the application is for mobile communications, radar or satellite navigation. The design track reflects the industry’s focus on recent advances in design technology with an emphasis on specific components such as filters and power amplifiers. Doherty and class-F PA architectures along with techniques such as digital pre-distortion and envelop tracking that are garnering so much industry attention at the moment will be among the hot topics presented in the field of power amplifier design.

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Pulsed GaN Power Transistors

April 17, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.

Pulsed RF Operation of Microsemi GaN RF Power Transistors

April 16, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.

Understanding VCO Concepts

January 16, 2013
This application note looks at VCO fundamentals, for typical oscillator designs through tuning sensitivity characteristics. Examples of a Colpitts and Clapp circuit are presented.

High Voltage Inverting Charge Pump Produces Low Noise

December 15, 2012

Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTC®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst Mode® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.

Biasing Constant Current MMICs

December 7, 2012

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.

New GaN FETs, Amplifiers and Switches Offer System Engineers a Way to Reduce RF Board Space and System Prime Power

September 17, 2012
Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

August 13, 2012
A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.

Multicarrier TD-SCMA Feasibility

August 13, 2012
There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.

Harmonic Mixer Primer: The Gateway to the Millimeter Wave Frontier is Harmonic Mixer Technology

July 17, 2012
The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

June 13, 2012
The small-signal nonlinear distortion of a system can be described with sufficient accuracy using a third order Volterra expansion of the output in terms of the input. This simple model assumes a memoryless, frequency independent amplifier system, whereby the amplifier characteristics remain constant over the operation bandwidth or, stated equivalently, the operation bandwidth is small compared with the available amplifier system bandwidth....


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