- Buyers Guide
Semiconductors / Integrated Circuits
UMShas announced the availability of greatly enhanced Process Design Kits leveraging the latest product innovations in Agilent’s ADS electronic design automation software.
BAE Systems’ new 45 nm ASICs for space environments pack ten times more functionality and performance into the same size as current chips, without adding significant power needs.
NXP Semiconductors N.V. announced that the first product from the RoadLINK™ range, the SAF5100 flexible software-defined radio processor for C2C and C2I communication, is available for automotive customer design-in.
Twenty one students from The University of Nottingham Ningbo Campus (UNNC), UK who have just completed a unique training course in the design of integrated circuits, have all been offered jobs by Sondrel in China.
Nujira Ltd.has selected ASE as its production packaging and test partner for its Coolteq.L family of High Accuracy Tracking Envelope Tracking ICs.
Fujitsu Semiconductor Europe (FSEU) announced the release of MB51T008A, a silicon substrate-based, GaN power device that features a breakdown voltage of 150 V.
Isola Group S.a.r.l., a market leader in laminate materials used to fabricate advanced multi-layer printed circuit boards, has expanded its Suzhou, China manufacturing facility.
Silicon Labs, a leader in high-performance, analog-intensive, mixed-signal ICs, has signed a definitive agreement to acquire Energy Micro AS based in Oslo, Norway, the late-stage privately held company that offers a power-efficient portfolio of 32-bit microcontrollers and is developing multi-protocol wireless RF solutions.
Element Six has acquired the assets and intellectual property of Group4 Labs, Inc., a semiconductor wafer materials company that manufactured GaN on-diamond semiconductor technology for RF and high-power devices.
EnSilica has partnered with Cross Border Technologies to accelerate the sales of both its IC design services and system IP solutions in key European and Asian markets, particularly Germany, France, Japan and Korea.
DOCUMENTS AND FILES
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.
This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.
Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTCÃÂ®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst ModeÃÂ® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.
The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.