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Semiconductors / Integrated Circuits

Semiconductors/MMIC/RFIC related products

ARTICLES

STMicroelectronics tops 5 billion MEMS sensors shipped

 STMicroelectronics has shipped 5 billion MEMS sensors, which combined with its total of more than 3 billion micro-actuators shipped, is claimed to demonstrate that ST is the only company with the expertise to cover the full range of micro-machined silicon devices. 


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ADI and EBV Elektronik sign EMEA distribution franchise agreement

EBV Elektronik and Analog Devices, Inc. have signed a distribution franchise agreement for the EMEA region, except Russia, Ukraine and Israel, effective November 3, 2014.


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UMC joins Fujitsu's new foundry company

United Microelectronics Corp. (UMC) and Fujitsu Semiconductor Ltd. have announced an agreement for UMC to become a minority shareholder of a newly formed subsidiary of Fujitsu Semiconductor that will include its 300 mm wafer manufacturing facility located in Kuwana, Mie, Japan.


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Investment in Omniradar for developing single-chip radar solutions

Omniradar has closed a round of equity and debt financing of €2.6 million that will be used to bring into production the company’s single-chip radar as a new precision sensor for personal security, industrial automation, environmental monitoring, etc.


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Avago Technologies Ltd. to acquire PLX Technology Inc. for $6.50 per share in cash

 Avago Technologies Ltd. and PLX Technology Inc. announced that they have entered into a definitive agreement under which Avago will acquire PLX, a leader in PCI Express silicon and software connectivity solutions, in an all-cash transaction valued at approximately $309 million, or $293 million net of cash and debt acquired.  


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e2v completes qualification of Maxim devices for defense and aerospace markets

e2v announced that qualification has been completed on several devices in the Maxim Life Extension Program, including CMOS analog switches and multiplexers.


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STMicroelectronics and Changan Automobile address Chinese automotive electronics market

International

STMicroelectronics and Changan Automobile have set up Changan – ST Automotive Electronic Joint Laboratory to extend the cooperation of the two companies in automotive electronics.


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Anokiwave Inc. announces the opening of its newest design center located in Billerica, MA

Anokiwave Inc., a supplier of semiconductors enabling mmW markets, announced the opening of its newest design center located in Billerica, MA to support the company's increasing demand for highly integrated SiGe core chips and GaAs/GaN front-end solutions.

 


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Samsung and STMicroelectronics to expand 28 nm FD-SOI technology

STMicroelectronicsand Samsung Electronics Co., Ltd. have signed a comprehensive agreement on 28 nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.


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Custom MMIC appoints Spartech-South as representative for southeast USA

Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is pleased to announce the appointment of Spartech-South as their technical sales representative in the southeastern states of the United States.


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DOCUMENTS AND FILES

Pulsed GaN Power Transistors

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.

Pulsed RF Operation of Microsemi GaN RF Power Transistors

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.

Understanding VCO Concepts

This application note looks at VCO fundamentals, for typical oscillator designs through tuning sensitivity characteristics. Examples of a Colpitts and Clapp circuit are presented.

High Voltage Inverting Charge Pump Produces Low Noise

Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTC®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst Mode® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.

Biasing Constant Current MMICs

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.

New GaN FETs, Amplifiers and Switches Offer System Engineers a Way to Reduce RF Board Space and System Prime Power

Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.

Multicarrier TD-SCMA Feasibility

There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.

Harmonic Mixer Primer: The Gateway to the Millimeter Wave Frontier is Harmonic Mixer Technology

The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

The small-signal nonlinear distortion of a system can be described with sufficient accuracy using a third order Volterra expansion of the output in terms of the input. This simple model assumes a memoryless, frequency independent amplifier system, whereby the amplifier characteristics remain constant over the operation bandwidth or, stated equivalently, the operation bandwidth is small compared with the available amplifier system bandwidth....

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