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Semiconductors / Integrated Circuits

Semiconductors/MMIC/RFIC related products


Avago Technologies Ltd. to acquire PLX Technology Inc. for $6.50 per share in cash

June 23, 2014

 Avago Technologies Ltd. and PLX Technology Inc. announced that they have entered into a definitive agreement under which Avago will acquire PLX, a leader in PCI Express silicon and software connectivity solutions, in an all-cash transaction valued at approximately $309 million, or $293 million net of cash and debt acquired.  

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e2v completes qualification of Maxim devices for defense and aerospace markets

June 23, 2014

e2v announced that qualification has been completed on several devices in the Maxim Life Extension Program, including CMOS analog switches and multiplexers.

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STMicroelectronics and Changan Automobile address Chinese automotive electronics market

May 30, 2014

STMicroelectronics and Changan Automobile have set up Changan – ST Automotive Electronic Joint Laboratory to extend the cooperation of the two companies in automotive electronics.

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Anokiwave Inc. announces the opening of its newest design center located in Billerica, MA

May 21, 2014

Anokiwave Inc., a supplier of semiconductors enabling mmW markets, announced the opening of its newest design center located in Billerica, MA to support the company's increasing demand for highly integrated SiGe core chips and GaAs/GaN front-end solutions.


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Samsung and STMicroelectronics to expand 28 nm FD-SOI technology

May 19, 2014

STMicroelectronicsand Samsung Electronics Co., Ltd. have signed a comprehensive agreement on 28 nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.

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Custom MMIC appoints Spartech-South as representative for southeast USA

May 15, 2014

Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is pleased to announce the appointment of Spartech-South as their technical sales representative in the southeastern states of the United States.

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SemiGen's limiter diodes

May 7, 2014

SemiGen Inc., an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, offers Limiter Diodes that feature fast turn-on time, low loss, low capacitance and resistance, and easy bonding.

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Skyworks and Panasonic form joint venture for high performance filter solutions

April 28, 2014

Skyworks Solutions, Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, announced the creation of a joint venture with Panasonic Corporation, one of the largest electronic product manufacturers in the world, to design, develop and deliver high performance filters including surface acoustic wave (SAW) and temperature compensated (TC) SAW devices. At the core of the joint venture is Panasonic Filter Division's engineering and process talent, expertise in filter design and leading edge products as well as 412 fundamental filter patents and patent applications.

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Challenging the Status Quo

April 24, 2014

The RF/microwave semiconductor market is poised to undergo some major shifts in the not too distant future with recent news of mergers between leading GaAs-based integrated device manufacturers, RFMD and TriQuint, CMOS-based RF front-ends for multi-mode, multi-band mobile devices from Peregrine and Qualcomm and the continued success in commercializing GaN by a number of vendors.  As GaN and CMOS semiconductor processes continue to improve performance and reduce costs, market share will undoubtedly shift between players.

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Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

April 23, 2014

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).


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Pulsed GaN Power Transistors

April 17, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the pulser circuit used on the Microsemi evaluation test fixtures.

Pulsed RF Operation of Microsemi GaN RF Power Transistors

April 16, 2013

This paper explains the pulsed RF operation of Microsemi pulsed GaN HEMT RF power transistors using as an example the 1011GN-700ELM 1030 MHz Mode-S Enhanced Message Length (ELM) avionics device. General descriptions are presented detailing both the pulsed gate bias operation and the bias sequencing operation of the “pulser” circuit used on the Microsemi evaluation test fixtures.

Understanding VCO Concepts

January 16, 2013
This application note looks at VCO fundamentals, for typical oscillator designs through tuning sensitivity characteristics. Examples of a Colpitts and Clapp circuit are presented.

High Voltage Inverting Charge Pump Produces Low Noise

December 15, 2012

Dual-polarity supplies are commonly needed to operate electronics such as op amps, drivers, or sensors, but there is rarely a dual-polarity supply available at the point of load. The LTC®3260 is an inverting charge pump (inductorless) DC/DC converter with dual low noise LDO regulators that can produce positive and negative supplies from a single wide input (4.5V to 32V) power source. It can switch between high efficiency Burst Mode® operation and low noise constant frequency mode, making it attractive for both portable and noise-sensitive applications.

Biasing Constant Current MMICs

December 7, 2012

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor.

New GaN FETs, Amplifiers and Switches Offer System Engineers a Way to Reduce RF Board Space and System Prime Power

September 17, 2012
Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

August 13, 2012
A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.

Multicarrier TD-SCMA Feasibility

August 13, 2012
There are several options for the architecture of the transmit signal path. The factors that impact transmit signal elements are introduced, followed by a discussion of the different architectures. Figure 1 shows a direct conversion architecture for an initial point of reference only. Section 6 of 3GPP TS 25.105 describes the transmit signal requirements used throughout this discussion.

Harmonic Mixer Primer: The Gateway to the Millimeter Wave Frontier is Harmonic Mixer Technology

July 17, 2012
The next frequency frontier is the millimeter wave (mm-wave) band, which occupies the 30 GHz to 300 GHz spectrum (wavelengths from 10 to 1 mm). Emerging applications now span radio astronomy, communication, imaging, space research, and homeland security, and are starting to seriously populate this vast spectrum resourse. Market forecast and limited available spectrum suggest that attractive growth is just over the horizon so explorers are naturally migrating to stake their claim in this next frontier.

Small-Signal Intermodulation Distortion in OFDM Transmission Systems

June 13, 2012
The small-signal nonlinear distortion of a system can be described with sufficient accuracy using a third order Volterra expansion of the output in terms of the input. This simple model assumes a memoryless, frequency independent amplifier system, whereby the amplifier characteristics remain constant over the operation bandwidth or, stated equivalently, the operation bandwidth is small compared with the available amplifier system bandwidth....


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