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Amplifiers

Amplifier products

ARTICLES

Amplifier Technology offers drop-in replacement for Army radio

International
June 10, 2013

When the terms of a military contract required drop-in replacements for an obsolete RF transmitter-amplifier Amplifier Technology reverse engineered the 25 year old technology and developed a 21st Century version that the customer could use with its existing battlefield radios.


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Teseq introduces CBA 400M-260 broadband amplifier

May 23, 2013

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W.


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Instrumentation amplifiers

April 23, 2013

QuinStar Technologies Inc. of Torrance, CA announces the release of the QAI family of Instrumentation Amplifiersin the millimeter wave frequency range based on the most advanced device and circuit integration technology.These amplifiers can be designed to operate over a wide band or over relatively narrow band with an exceptionally high power level. Our customers have used them for applications as diverse as plasma diagnostic, medical research, communication and remote sensing.


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Broadband amplifier

April 23, 2013

Recently released ultra-broadband amplifier offering low noise figures, good gain flatness, and output power. Model MSH-6492401 operates on 1.0-10 GHz with 28dB gain, noise figure of 2.5dB, +20.0 Min Pout (1dBm), VSWR 2.0:1, and DC Power +12.0V / 300mA. The bandwidth makes this amplifier useful for many applications including ECM instrumentation and test sets. 


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MILMEGA expands servicing network in U.S. and Sweden

April 22, 2013

Teseq USA & Sweden Service Centres are now fully trained MILMEGA Global Support Networks.


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Power amplifiers dominate ARMMS April Conference

March 25, 2013

An impressive list of speakers on microwave power amplifier technology has been assembled for the April ARMMS RF & Microwave Conference.


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Nujira announces breakthrough LTE performance for CMOS PAs

February 22, 2013

Nujira Ltd. has released the details of significant test results that demonstrate how Envelope Tracking (ET) technology unlocks the potential of RF CMOS PAs for high end 3G and 4G smartphone applications.


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Nujira releases new 16-band ET RF front end for global LTE handsets

February 11, 2013

Nujira Ltd. has released its new Woodstock 16-band Multi-Mode, Multi-Band (MMMB) Envelope Tracking (ET) reference design for 4G smartphone RF front ends.


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Mesuro completes its expansion and relocation

January 22, 2013

Following the completion of a £700,000 funding round to expand its overseas sales and device characterization capabilities, Mesuro has announced the enhanced services and capabilities it is now able to offer its customers


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AR introduces new family of 400 MHz solid-state RF amplifiers

December 6, 2012

AR RF/Microwave Instrumentation has introduced a new family of solid-state RF amplifiers that instantaneously covers the 10 kHz to 400 MHz frequency range with both 200 and 400 W models. The amplifiers are designed to deliver all the power required for applications using MIL-STD, DO 160, and other automotive standards. These models can be used independently or with AR's RF conducted immunity generators when specific tests require higher powers than our standard CI Systems can generate.


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DOCUMENTS AND FILES

AR RF/Microwave Instrumentation "S" Series Amplifiers Produce Higher Power, Higher Fidelity Signals For Testing Wireless Output Devices

June 14, 2013

As more companies take advantage of the benefits of wireless technology, output device manufacturers must depend on highly linear, quality test equipment to meet those demands. Wireless communications encompass a number of applications.

Switch-Mode RF PAs Using Chireix Outphasing

May 31, 2013

Mobile network operating costs are driving the requirement for increased infrastructure efficiency, particularly in the final stage RF power amplifier. The venerable Chireix outphasing architecture proposed in 1936 by Henry Chireix has been updated with Gallium Nitride HEMT transistors operating in class E, and shown to deliver class leading efficiency.

Combiners for Doherty Power Amplifier Architectures

March 20, 2013

Doherty combiner product line covers major communication bands ranging from 700 MHz to 2700 MHz. Each model is optimized for the center frequency of targeted frequency band. However, as new spectrum is being released, the pre‐designed standard models can be tuned in customer applications to meet performance. This document provides guidelines to tune these standard models for off‐band applications.

Increasing Power Amplifier Test Throughput

January 16, 2013

Engineers who test mobile power amplifiers and front end modules are looking for ways to reduce test cost through maximizing throughput while ensuring that the devices meet required performance levels. This application note discusses these complex issues and recommended solutions using the Agilent PXI M9381A Vector Signal Generator as an example.

RF Amplifier Output Voltage, Current, Power, and Impedance Relationship

June 13, 2012
The mismatch between these real loads and the amplifier's output impedance result in a percentage of the forward power being reflected back to the amplifier. In some cases, excessive reflected power can damage an amplifier and precautions that may affect forward power are required. This Application note highlights the major RF amplifier characteristics that impact forward power as well as net power allowing the use of Ohm's law, even when conditions are far from ideal.

Measuring Leakage Current in RF Power Transistors

February 12, 2012
The published specifications for leakage current in RF power devices are often a source of concern and confusion for engineers and technicians. This paper examines the real meaning behind the leakage current specifications and offers guidance on properly testing a device for leakage current.

Wideband 400W Pulsed Power GaN HEMT Amplifiers

January 16, 2012
RFMD has developed 400W pulsed output power GaN HEMT amplifiers operating over 2.9GHz to 3.5GHz band or 17% bandwidth. Under pulsed RF drive with 10% duty cycle and 100us pulse width, the amplifier delivers output power in the range of 401W to 446W over the band, with drain efficiency of 48% to 55% when biased at drain voltage of 65V.

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