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    <title>MMICs&amp;More</title>
    <description>RFIC, MMIC and Semiconductor featured stories</description>
    <link>https://www.microwavejournal.com/rss</link>
    <language>en-us</language>
    <item>
      <title>Infineon Kicks Off Smart Power Fab in Dresden, Completion Planned for 2026</title>
      <description>Infineon Technologies AG is starting construction of its new plant for analog/mixed-signal technologies and power semiconductors in Dresden.</description>
      <content:encoded>
        <![CDATA[<p>Infineon Technologies AG is starting construction of its new plant for analog/mixed-signal technologies and power semiconductors in Dresden.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/39650</guid>
      <pubDate>Thu, 16 Feb 2023 08:53:57 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/39650-infineon-kicks-off-smart-power-fab-in-dresden-completion-planned-for-2026</link>
      <media:content url="https://www.microwavejournal.com/ext/resources/images/Newsletters/News/News_1/Infineon-2-16-23.webp?t=1676556131" type="image/jpeg" medium="image" fileSize="288012">
        <media:title type="plain">Infineon-2-16-23.jpg</media:title>
      </media:content>
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    <item>
      <title>Challenging the Status Quo</title>
      <description>The RF/microwave semiconductor market is poised to undergo some major shifts in the not too distant future with recent news of mergers between leading GaAs-based integrated device manufacturers, RFMD and TriQuint, CMOS-based RF front-ends for multi-mode, multi-band mobile devices from Peregrine and Qualcomm and the continued success in commercializing GaN by a number of vendors. As GaN and CMOS semiconductor processes continue to improve performance and reduce costs, market share will undoubtedly shift between players.</description>
      <content:encoded>
        <![CDATA[<p>
	The RF/microwave semiconductor market is poised to undergo some major shifts in the not too distant future with recent news of mergers between leading GaAs-based integrated device manufacturers, RFMD and TriQuint, CMOS-based RF front-ends for multi-mode, multi-band mobile devices from Peregrine and Qualcomm and the continued success in commercializing GaN by a number of vendors. &nbsp;As GaN and CMOS semiconductor processes continue to improve performance and reduce costs, market share will undoubtedly shift between players.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/blogs/8/post/22092</guid>
      <pubDate>Thu, 24 Apr 2014 00:00:00 -0400</pubDate>
      <link>https://www.microwavejournal.com/blogs/8-david-vye-mwj-editor/post/22092-challenging-the-status-quo</link>
    </item>
    <item>
      <title>MACOM to showcase highly integrated, plastic-packaged GaN solutions at EDI CON</title>
      <description>M/A-COM Technology Solutions Inc.(“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, announced that it will showcase its industry-leading portfolio of new GaN power products at EDI CON 2014 in Beijing, China, April 8-10, 2014. The company will particpate in the event as an exhibitor in Booth #612 and in the conference as a presenter in the peer-reviewed technical session, workshops and special GaN expert panel to be sponsored by Richardson RFPD.</description>
      <content:encoded>
        <![CDATA[<p>
	<a href="http://www.macomtech.com/">M/A-COM Technology Solutions Inc.</a>(&ldquo;MACOM&rdquo;), a leading supplier of high-performance RF, microwave and millimeter wave products, announced that it will showcase its industry-leading portfolio of new GaN power products at EDI CON 2014 in Beijing, China, April 8-10, 2014. The company will particpate in the event as an exhibitor in Booth #612 and in the conference as a presenter in the peer-reviewed technical session, workshops and special GaN expert panel to be sponsored by Richardson RFPD.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/21710</guid>
      <pubDate>Thu, 27 Feb 2014 13:27:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/21710-article-headline</link>
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    <item>
      <title>MEI Wet Bench Automates Wafer Fab</title>
      <description>MEI was at CS Man Tech the week of May 13th to demo the company's high-quality semiconductor and batch immersion process tools that perform. All MEI’s semiconductor equipment are custom tailored to specific semiconductor processes and chemistry.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.microwavejournal.com/ext/resources/MEI_wetBench.jpg" style="width: 175px; margin: 3px; float: left; height: 134px;" />MEI </strong>was at CS Man Tech the week of May 13th to demo the company&#39;s high-quality semiconductor and batch immersion process tools that perform. All MEI&rsquo;s semiconductor equipment are custom tailored to specific semiconductor processes and chemistry.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/19860</guid>
      <pubDate>Wed, 15 May 2013 11:19:00 -0400</pubDate>
      <link>https://www.microwavejournal.com/articles/19860-mei-wet-bench-automates-wafer-fab</link>
    </item>
    <item>
      <title>UMS appoints Link Microtek as rep for III-V MMICs and foundry services</title>
      <description>Link Microtek has been appointed as a representative for United Monolithic Semiconductors in the UK and Ireland.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong>Link Microtek</strong> has been appointed as a representative for <strong>United Monolithic Semiconductors</strong> in the UK and Ireland.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/19571</guid>
      <pubDate>Fri, 05 Apr 2013 00:00:00 -0400</pubDate>
      <link>https://www.microwavejournal.com/articles/19571-ums-appoints-link-microtek-as-rep-for-iii-v-mmics-and-foundry-services</link>
    </item>
    <item>
      <title>KRYTAR announces expansion of compact, ultra-broadband directional couplers</title>
      <description>KRYTAR Inc. announces the addition of two new models offering 10 dB nominal coupling over the ultra-broadband frequency range of 2 to 40 GHz, each in a single, compact and lightweight package.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.microwavejournal.com/ext/resources/images/Newsletters/2013/MW-Flash-images/Krytar-102040010K.jpg" style="width: 200px; height: 127px; margin: 3px; float: left;" />KRYTAR Inc.&nbsp;</strong>announces the addition of two new models offering 10 dB nominal coupling over the ultra-broadband frequency range of 2 to 40 GHz, each in a single, compact and lightweight package.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/19012</guid>
      <pubDate>Thu, 24 Jan 2013 12:15:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/19012-krytar-announces-continued-expansion-of-compact-ultra-broadband-directional-couplers</link>
    </item>
    <item>
      <title>Richardson RFPD introduces 35 W, 32 V GaN on SiC RF power transistors from TriQuint</title>
      <description>Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor Inc. (TriQuint).</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.triquint.com/products/d/DOC-B-00000215" style="width: 199px; height: 131px; margin: 3px; float: left;" />Richardson RFPD Inc. </strong>announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from <strong>TriQuint Semiconductor Inc. </strong>(TriQuint).</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18977</guid>
      <pubDate>Wed, 16 Jan 2013 10:50:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18977-richardson-rfpd-introduces-35-w-32-v-gan-on-sic-rf-power-transistors-from-triquint</link>
    </item>
    <item>
      <title>Stackpole's precision thin film resistor arrays offer tolerances down to 0.1%</title>
      <description>Stackpole's RAVN Series is a thin film based chip array designed for applications with tight tolerance or tight TCR requirements. The Series offers four resistive elements in a 1.6 x 3.2 mm package with resistance values from 100 Ω up to 33 K Ω in a 0.1 percent tolerance.</description>
      <content:encoded>
        <![CDATA[<p>
	<img alt="" src="http://www.microwavejournal.com//ext/resources/images/Newsletters/2013/MW-Flash-images/Stackpole_SE384-RAVN-Series.jpg" style="width: 200px; height: 122px; margin: 3px; float: left;" /><strong>Stackpole</strong>&#39;s<strong>&nbsp;</strong>RAVN Series is a thin film based chip array designed for applications with tight tolerance or tight TCR requirements. The Series offers four resistive elements in a&nbsp;1.6 x 3.2 mm&nbsp;package with resistance values from 100 Ω up to 33 K Ω in a 0.1 percent tolerance.&nbsp;</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18955</guid>
      <pubDate>Thu, 10 Jan 2013 10:08:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18955-stackpoles-precision-thin-film-chip-resistor-arrays-offer-tolerances-as-low-as-01</link>
    </item>
    <item>
      <title>Mini-Circuits introduces 75 Ω amplifiers for CATV, FTTx, MoCA and satellite systems</title>
      <description>Mini-Circuits' new PGA-106 series of amplifiers deliver a winning combination of high dynamic range, low noise, and flat gain, fine-tuned to meet specific customer demands across a wide range of 75 Ω systems.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.minicircuits.com/Images/DF782.jpg" style="width: 150px; height: 143px; margin: 3px; float: left;" />Mini-Circuits&#39;</strong> new PGA-106 series of amplifiers deliver a winning combination of high dynamic range, low noise, and flat gain, fine-tuned to meet specific customer demands across a wide range of 75 &Omega; systems.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18908</guid>
      <pubDate>Wed, 02 Jan 2013 11:28:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18908-mini-circuits-introduces-75-amplifiers-for-catv-fttx-moca-and-satellite-systems</link>
    </item>
    <item>
      <title>CarlisleIT launches SMP-L push-on connector series with Secure-Lok</title>
      <description>CarlisleIT announced its new family of push-on connectors that incorporates a patent pending locking mechanism. The locking feature adds a strong retention force to the standard push-on connector which makes it ideal for rugged military and commercial applications susceptible to vibration.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.carlisleit.com/sites/default/files/imagecache/product_family_page/SMP-L_Family_F.jpg" style="width: 200px; height: 135px; margin: 3px; float: left;" />CarlisleIT </strong>announced its new family of push-on connectors that incorporates a patent pending locking mechanism. The locking feature adds a strong retention force to the standard push-on connector which makes it ideal for rugged military and commercial applications susceptible to vibration.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18884</guid>
      <pubDate>Wed, 26 Dec 2012 11:04:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18884-carlisleit-launches-smp-l-push-on-connector-series-with-secure-lok</link>
    </item>
    <item>
      <title>Custom MMIC's new amplifiers offer high output power and positive bias</title>
      <description>Custom MMIC added three new GaAs MMIC power amplifiers covering 5 to 11 GHz to their growing standard product library. The CMD169P4 (5 to 7 GHz), CMD170P4 (7.5 to 9 GHz) and CMD171P4 (9.5 to 11 GHz) each have an output 1 dB compression point of greater than +28 dBm, with gain levels from 20 to 30 dB.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.microwavejournal.com/ext/resources/images/Newsletters/2012/MWF2/CM_PA_PR.jpg" style="width: 200px; height: 153px; margin: 3px; float: left;" />Custom MMIC</strong>&nbsp;added three new GaAs MMIC power amplifiers covering 5 to 11 GHz to their growing standard product library. The CMD169P4 (5 to 7 GHz), CMD170P4 (7.5 to 9 GHz) and CMD171P4 (9.5 to 11 GHz) each have an output 1 dB compression point of greater than +28 dBm, with gain levels from 20 to 30 dB.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18867</guid>
      <pubDate>Thu, 20 Dec 2012 09:56:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18867-custom-mmics-new-mmic-amplifiers-offer-high-output-power-and-positive-bias</link>
    </item>
    <item>
      <title>Maxim Integrated introduces smallest bipolar, Beyond-the-Rails ADCs</title>
      <description>Maxim Integrated Products Inc. announced it is now shipping the MAX11166 and MAX11167, the industry's smallest bipolar ±5 V, 16-bit analog-to-digital converters (ADCs), available in a tiny 9 mm2 package.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="https://www.microwavejournal.com/ext/resources/images/Newsletters/2012/MWF2/MAX11166_MAX11167_PR_graphic_RGB.jpg" style="width: 225px; height: 150px; margin: 3px; float: left;" />Maxim Integrated Products Inc.</strong>&nbsp;announced it is now shipping the MAX11166 and MAX11167, the industry&#39;s smallest bipolar &plusmn;5 V, 16-bit analog-to-digital converters (ADCs), available in a tiny 9 mm<sup>2</sup> package.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18831</guid>
      <pubDate>Wed, 12 Dec 2012 16:45:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18831-maxim-integrated-introduces-industrys-smallest-bipolar-beyond-the-rails-adcs</link>
    </item>
    <item>
      <title>CML Microcircuits releases a digital PMR chipset for low-power radio</title>
      <description>CML Microcircuits has released new function images for their successful CMX7131/7141 family of digital PMR processors.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong><img alt="" src="http://www.microwavejournal.com//ext/resources/images/Newsletters/2012/MWF2/CMX71X1_Chipset.jpg" style="width: 250px; height: 133px; margin: 3px; float: left;" />CML Microcircuits</strong> has released new function images for their successful CMX7131/7141 family of digital PMR processors.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18792</guid>
      <pubDate>Fri, 07 Dec 2012 15:10:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18792-cml-microcircuits-releases-a-digital-pmr-chipset-for-the-ultimate-low-power-radio</link>
    </item>
    <item>
      <title>GPS/GNSS IC market on course to break $2 B in 2012</title>
      <description>The GNSS IC market is showing steady revenue growth in 2012, with the industry now setting its sights on the next major milestone: $3 Billion.</description>
      <content:encoded>
        <![CDATA[<p>
	<img alt="" src="https://data.abiresearch.com/eblasts/MD-GNSS-155.jpg" style="width: 225px; height: 148px; margin: 3px; float: left;" />The GNSS IC market is showing steady revenue growth in 2012, with the industry now setting its sights on the next major milestone: $3 Billion.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18741</guid>
      <pubDate>Fri, 30 Nov 2012 10:25:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18741-gpsgnss-ic-market-on-course-to-break-2-b-in-2012</link>
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    <item>
      <title>Samsung Galaxy Appeal indicates shift from GaAS to CMOS PAs</title>
      <description>The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA). Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.</description>
      <content:encoded>
        <![CDATA[<p>
	<img alt="" src="https://www.samsung.com/us/system/consumer/product/sg/hi/82/sghi827zsaatt/i827_400x400_large1_cf.jpg" style="width: 150px; height: 150px; margin: 3px; float: left;" />The <strong>Samsung </strong>Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).&nbsp; Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18720</guid>
      <pubDate>Mon, 26 Nov 2012 11:35:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18720-samsung-galaxy-appeal-indicates-shift-from-gaas-to-cmos-pas-for-3g-handsets</link>
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    <item>
      <title>Vishay releases new 36 W battery shunt resistor with molded enclosure</title>
      <description>Vishay Intertechnology Inc. announced a new Power Metal Strip® battery shunt resistor featuring a molded enclosure with a four-pin connector. Providing easy PCB connection to the shunt resistor assembly, the WSBM8518 allows design engineers to focus on circuit development instead of PCB connection issues.</description>
      <content:encoded>
        <![CDATA[<p>
	<strong>Vishay Intertechnology Inc.&nbsp;</strong>announced a new Power Metal Strip&reg; battery shunt resistor featuring a molded enclosure with a four-pin connector. Providing easy PCB connection to the shunt resistor assembly, the WSBM8518 allows design engineers to focus on circuit development instead of PCB connection issues.&nbsp;</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18715</guid>
      <pubDate>Mon, 26 Nov 2012 09:16:32 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18715-vishay-releases-new-36-w-battery-shunt-resistor-with-molded-enclosure</link>
    </item>
    <item>
      <title>FMC simplifies JESD204B-compatible data converter-to-FPGA connectivity</title>
      <description>Analog Devices Inc. introduced an FPGA mezzanine card (FMC) that incorporates JEDEC JESD204B SerDes (serializer/de-serializer) technology to allow digital and analog designers to simplify high-speed data converter-to-FPGA connectivity.</description>
      <content:encoded>
        <![CDATA[<p>
	<img alt="" src="https://www.microwavejournal.com/ext/resources/images/Newsletters/2012/MWF2/ADI-FMC176.jpg" style="width: 200px; height: 159px; margin: 3px; float: left;" /><strong>Analog Devices Inc.</strong>&nbsp;introduced an FPGA mezzanine card (FMC) that incorporates JEDEC JESD204B SerDes (serializer/de-serializer) technology to allow digital and analog designers to simplify high-speed data converter-to-FPGA connectivity.</p>
]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/18660</guid>
      <pubDate>Tue, 13 Nov 2012 10:57:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/18660-fpga-mezzanine-card-simplifies-jesd204b-compatible-data-converter-to-fpga-connectivity</link>
    </item>
    <item>
      <title>MWC 2012: For mobile front-end RFICs - size and efficiency matter</title>
      <description>Leading RFIC front-end device manufacturers were on hand at the2012 Mobile World Congress, showing off the latest chip sets. To achieve smaller footprints and deliver on higher power added efficiency, vendors are offering different solutions which could shake up the industry.</description>
      <content:encoded>
        <![CDATA[<p><img alt="Agilent at MWC" src="http://www.microwavejournal.com//ext/resources/images/FeaturedStories/skyworks-mwc.jpg" style="margin: 3px; float: left">
	Leading RFIC front-end device manufacturers were on hand at the<em>2012 Mobile World Congress</em>, showing off the latest chip sets. To achieve smaller footprints and deliver on higher power added efficiency, vendors are offering different solutions which could shake up the industry.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/17181</guid>
      <pubDate>Wed, 14 Mar 2012 20:25:00 -0400</pubDate>
      <link>https://www.microwavejournal.com/articles/17181-mwc-2012--size-and-efficiency-matter</link>
    </item>
    <item>
      <title>Hittite launches new SPDT switch and 5-bit MMIC attenuators</title>
      <description>Hittite Microwave Corp. has introduced a new single pole double throw (SPDT) switch and two new serial controlled 5-bit digital attenuator MMICs, which are ideal for automotive, microwave radio, test equipment, military and space applications up to 50 GHz.</description>
      <content:encoded>
        <![CDATA[<p><img src="http://www.microwavejournal.com//ext/resources/images/Newsletters/2012/Hittite-HMC.jpg
" style="margin: 2px; width: 210px; float: left; height: 140px" />
<b>Hittite Microwave Corp.</b> has introduced a new single pole double throw (SPDT) switch and two new serial controlled 5-bit digital attenuator MMICs, which are ideal for automotive, microwave radio, test equipment, military and space applications up to 50 GHz.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/16891</guid>
      <pubDate>Mon, 06 Feb 2012 09:51:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/16891-hittite-launches-new-spdt-switch-and-5-bit-mmic-attenuators</link>
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      <title>Samsung selects Javelin's CMOS 3G power amplifier</title>
      <description>Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd. has selected Javelin’s JAV5501 Band I PA for new Galaxy smartphones.</description>
      <content:encoded>
        <![CDATA[<p>
	<b><img alt="Javelin_CMOS_PA" src="http://www.microwavejournal.com//ext/resources/images/products/thumb/Javelin-Samsung-Press-Photo-Feb-1-2012.jpg" style="margin: 2px; width: 210px; float: left; height: 140px" />Javelin Semiconductor Inc.</b>, innovator of the world&rsquo;s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd. has selected Javelin&rsquo;s JAV5501 Band I PA for new Galaxy smartphones.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/16847</guid>
      <pubDate>Tue, 31 Jan 2012 16:24:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/16847-samsung-selects-javelin-s-cmos-3g-power-amplifier</link>
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    <item>
      <title>Avago introduces PA for LTE cellular infrastructure equipment</title>
      <description>Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.</description>
      <content:encoded>
        <![CDATA[<p>
	<b><img alt="Avago_MGA-43128" src="http://www.microwavejournal.com//ext/resources/images/products/thumb/Avago-MGA-43128-jpeg.jpg" style="margin-left: 3px; margin-right: 3px; margin-top: 3px; margin-bottom: 3px; float: left; width: 200px; height: 200px; " />Avago Technologies</b>, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.</p>]]>
      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/16768</guid>
      <pubDate>Wed, 18 Jan 2012 12:58:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/16768-avago-introduces-pa-for-lte-cellular-infrastructure-equipment</link>
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      <title>TriQuint advances DARPA GaN R&amp;D program ahead of schedule</title>
      <description>TriQuint Semiconductor Inc. announced that it has begun work on Phase II of the Defense Advanced Research Projects Agency (DARPA) multi-year Nitride Electronic NeXt-Generation Technology (NEXT) program as a prime contractor.</description>
      <content:encoded>
        <![CDATA[<p>
	<b><img alt="GaN" src="http://www.microwavejournal.com//ext/resources/images/thumb/product_pics/GaN-wafer.jpg" style="margin-left: 3px; margin-right: 3px; margin-top: 3px; margin-bottom: 3px; float: left; width: 222px; height: 150px; " />TriQuint Semiconductor Inc.</b> announced that it has begun work on Phase II of the Defense Advanced Research Projects Agency (DARPA) multi-year Nitride Electronic NeXt-Generation Technology (NEXT) program as a prime contractor.</p>
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      </content:encoded>
      <guid>http://www.microwavejournal.com/articles/464</guid>
      <pubDate>Wed, 11 Jan 2012 13:17:00 -0500</pubDate>
      <link>https://www.microwavejournal.com/articles/464-triquint-advances-darpa-gan-r-d-program-ahead-of-schedule</link>
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