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Items Tagged with 'operating'
Linear Technology Corp. announces the LT8311, a high efficiency secondary-side MOSFET driver that operates without the need for primary control in an isolated synchronous forward converter. The LT8311’s unique preactive mode eliminates the need for a signal transformer for primary to secondary-side communication by sensing signals on the secondary side to control synchronous rectification. This mode reduces component count and solution size.
Precision Devices' high temperature OCXO expands satcom and military capabilities while reducing power
Precision Devices Inc., a member of the Avrio Technology Group LLC, has announced the high temperature (to +90°C) VN01 and VN03 series of Oven Controlled Crystal Oscillators (OCXO). This product is ideal for applications like satellite communications and a variety of military systems where extremely high temperature operating environments are the normal.
Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.
AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.
Richardson RFPD introduces high power GaN transistors in rugged, space-saving plastic packages from MACOM
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).
Vishay Intertechnology Inc. introduced two new IHTH high-current, high-temperature through-hole inductors in the 0750 and 1125 case sizes. For automotive applications, the AEC-Q200-qualified IHTH-0750IZ-5A and IHTH-1125KZ-5A feature high operating temperatures to +155 °C, high rated currents to 125 A, and a wide range of inductance values from 0.47 µH to 100 µH.
LTE-capable networks will continue to mushroom around the globe through 2018. In particular, frequency-division duplex (FDD) networks will see their population coverage expanding at a compound annual growth rate (CAGR) of 33 percent between 2012 and 2018 to hit 57 percent. Time-division duplex (TDD) networks will gain ground at a more rapid rate of 43 percent during this period but will only reach 52 percent population coverage due to fewer licensed markets currently.