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Items Tagged with 'operating'

ARTICLES

Coilcraft launches new RF Inductor Finder web tool

 Coilcraft has launched an all-new RF Inductor Finder web tool that allows users to search and compare inductors based on their exact operating frequency, rather than just datasheet test frequencies. 


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Linear's synchronous forward MOSFET driver eliminates signal transformer

Linear Technology Corp. announces the LT8311, a high efficiency secondary-side MOSFET driver that operates without the need for primary control in an isolated synchronous forward converter. The LT8311’s unique preactive mode eliminates the need for a signal transformer for primary to secondary-side communication by sensing signals on the secondary side to control synchronous rectification. This mode reduces component count and solution size.


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Precision Devices' high temperature OCXO expands satcom and military capabilities while reducing power

Precision Devices Inc., a member of the Avrio Technology Group LLC, has announced the high temperature (to +90°C) VN01 and VN03 series of Oven Controlled Crystal Oscillators (OCXO).  This product is ideal for applications like satellite communications and a variety of military systems where extremely high temperature operating environments are the normal.


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Linear introduces 42 V, 4 A (IOUT), synchronous step-down silent switcher

Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.


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AWR and NXP release ultra-wideband Doherty amplifier reference design

AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.


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Richardson RFPD introduces high power GaN transistors in rugged, space-saving plastic packages from MACOM

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).


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Vishay announces new IHTH high-current, high-temperature inductors for automotive applications

Vishay Intertechnology Inc. introduced two new IHTH high-current, high-temperature through-hole inductors in the 0750 and 1125 case sizes. For automotive applications, the AEC-Q200-qualified IHTH-0750IZ-5A and IHTH-1125KZ-5A feature high operating temperatures to +155 °C, high rated currents to 125 A, and a wide range of inductance values from 0.47 µH to 100 µH.


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More than 1 in 2 people will be covered by LTE-FDD by 2018

LTE-capable networks will continue to mushroom around the globe through 2018. In particular, frequency-division duplex (FDD) networks will see their population coverage expanding at a compound annual growth rate (CAGR) of 33 percent between 2012 and 2018 to hit 57 percent. Time-division duplex (TDD) networks will gain ground at a more rapid rate of 43 percent during this period but will only reach 52 percent population coverage due to fewer licensed markets currently.


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