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Items Tagged with 'operating'
Precision Devices' high temperature OCXO expands satcom and military capabilities while reducing power
Precision Devices Inc., a member of the Avrio Technology Group LLC, has announced the high temperature (to +90°C) VN01 and VN03 series of Oven Controlled Crystal Oscillators (OCXO). This product is ideal for applications like satellite communications and a variety of military systems where extremely high temperature operating environments are the normal.
Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.
AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.
Richardson RFPD introduces high power GaN transistors in rugged, space-saving plastic packages from MACOM
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).
Vishay Intertechnology Inc. introduced two new IHTH high-current, high-temperature through-hole inductors in the 0750 and 1125 case sizes. For automotive applications, the AEC-Q200-qualified IHTH-0750IZ-5A and IHTH-1125KZ-5A feature high operating temperatures to +155 °C, high rated currents to 125 A, and a wide range of inductance values from 0.47 µH to 100 µH.
LTE-capable networks will continue to mushroom around the globe through 2018. In particular, frequency-division duplex (FDD) networks will see their population coverage expanding at a compound annual growth rate (CAGR) of 33 percent between 2012 and 2018 to hit 57 percent. Time-division duplex (TDD) networks will gain ground at a more rapid rate of 43 percent during this period but will only reach 52 percent population coverage due to fewer licensed markets currently.