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Items Tagged with 'devices'

ARTICLES

Guerrilla RF GRF2060/GRF2062 broadband, low noise amplifiers

June 12, 2014

Guerrilla RF, Inc., a leading provider of high performance MMICs, is pleased to announce the introduction of our first family of broadband, low noise amplifiers featuring Guerrilla Armor™, our patented and proprietary architecture for insuring high off-state isolation for the LNA under high RF input power level conditions.


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Arrow's RF & Power business introduces expanded line of MLS flatpack aluminum electrolytic capacitors

May 13, 2014

Arrow Electronics, Inc. announced the availability and full design support capabilities for the expanded line of MLS flatpack aluminum electrolytic capacitors from Cornell Dubilier.


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Vishay Intertechnology Hi-Rel solid tantalum chip capacitors offer built-in fuse for military/aerospace systems

May 1, 2014

Vishay Intertechnology Inc. introduced a new Hi-Rel series of TANTAMOUNT® surface-mount solid tantalum molded chip capacitors for military and aerospace applications. Available with high-reliability screening and surge current testing options in accordance with MIL-PRF-55365, the Vishay Sprague T42series combines a built-in fuse for fail-safe operation with high capacitance and voltage ratings and low ESR down to 80 mΩ at +25 °C and 100 kHz. 


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Peregrine upgrades industry-leading RF digital step attenuator

April 23, 2014

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces its next-generation, UltraCMOS PE4312 DSA. Successor to the popular PE4302 – which boasts more than 35 million units shipped since its introduction – the new PE4312 enables flexible, wide dynamic-range network-infrastructure designs that require highly accurate and efficient amplitude control. This DSA upgrade is ideally suited for wireless-infrastructure devices, broadband consumer and infrastructure equipment, land mobile radios (LMRs), test-and-measurement equipment and military RF applications.


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Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

April 23, 2014

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).

 


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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

April 18, 2014

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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API Technologies introduces 2 to 7 channel switched filter banks with configurable frequency bands

April 15, 2014

API Technologies Corp., a leading provider of high performance RF/microwave, power and security solutions for critical and high-reliability applications, introduces a new line of standard switched filter bankswith customer-specified frequency bands from 2 to 7 channels. With lead times as fast as four weeks, the configurable solution significantly reduces development cycle time, resulting in cost savings and faster time to market.


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Anite is first to offer 4x4 MIMO device testing capability

April 10, 2014

Anite, a global leader in wireless equipment testing technology, announced that it is first to offer chipset and device manufacturers the ability to verify their 4x4 Downlink (DL) MIMO designs and products, accelerating the development of LTE and LTE-Advanced devices. The milestone was achieved in close collaboration with a leading device manufacturer using Anite’s Development Toolset - an easy to use solution for early stage testing.. 


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Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

April 8, 2014

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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GE MEMS switch technology demonstrates performance which could meet demands for next-generation “True 4G” mobile devices

March 24, 2014
Prototype device testing shows that GE’s RF MEMS switch can help enable increased data transfer speeds, enhanced signal quality, longer battery life, and the advanced RF designs required of LTE-Advanced devices.
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