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June 2013 Digital Edition Online Edition

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Real-Time USB Power Sensor

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Less is More: The New Mobile RF Front-End

Qualcomm discusses the features and innovations of the new RF360 CMOS mobile RF front-end.

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Less is More: The New Mobile RF Front-End

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TriQuint accelerates GaN offerings, releases significant new products and foundry services

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Eng. Manager - Technique to Minimize Phase Noise of Crystal Oscillators

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ARTICLES

RFMW introduces 35W GaN transistor from TriQuint Semiconductor

November 7, 2012
RFMW
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RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.


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