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Items Tagged with 'phemt'

ARTICLES

MACOM to showcase 1st X-Band core chip, GaN in plastic module and E-Band PAs at EuMW 2013

MACOM
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M/A-COM Technology Solutions (MACOM) will showcase a broad portfolio of new products for aerospace, defense and network applications, and present a technical paper during European Microwave Week in Nuremberg, Germany, October 6-11, 2013. Event attendees can visit MACOM at European Microwave Week in Nuremberg, Germany, October 6-11, 2013, Booth #169.


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New AWR white paper: Design Flow Considerations for PA MMIC Design

AWR Corp.
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A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) power amplifier (PA) design approach from a systems perspective.


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Fully-screened control devices and amplifiers available from KCB

KCB Solutions
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KCB Solutions, an ITAR and AS9100 accredited microwave design and manufacturing center, is pleased to announce a new line of fully-screened Hi-Rel switches, attenuators, and power amplifiers. These GaAs devices meet the screening and qualification requirements of MIL-PRF-38534 and MIL-PRF-38535 and are available in a choice of leaded packages or newly qualified KCB hermetic QFNs.


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RFMW introduces 800-Micron discrete FET from TriQuint

RFMW Ltd.
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RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.


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RFMD announces flexible GaAs sourcing strategy

RF Micro Devices Inc.
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RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.


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Hittite introduces 2 & 5 W PAs with on chip power detectors, cover 9-14 GHz

MMICs&More
Hittite Microwave Corp., Chelmsford, MA
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Hittite hmc952lp5 hmc952 hmc1053Hittite Microwave Corp. launched three new GaAs pHEMT MMIC power amplifiers which cover the 9 to 14 GHz frequency range and are ideal for microwave radio, military and space, SATCOM and test and measurement applications.


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Compact new MMIC LNA covers 0.3 to 3 GHz and occupies only 4.5x4.5 mm

MMICs&More
Hittite Microwave Corp., Chelmsford, MA
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Hittite hmc374sc70Hittite Microwave Corp. has released a new broadband GaAs pHEMT MMIC low noise amplifier. The HMC374SC70E is housed in a compact 2.15 x 2.1 mm surface mount package and is ideal for applications from 0.3 to 3.0 GHz.


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M/A-COM Tech announces 1.2 to 1.4 GHz GaAs pHEMT 6-bit digital phase shifter

M/A-COM Technology Solutions
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UMS GaAs power PHEMT process is space evaluated

United Monolithic Semiconductors
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United Monolithic Semiconductors (UMS) has announced that the PPH15X-10 MMIC GaAs power PHEMT process has been successfully space evaluated and is now part of the European Preferred Part List established by the European Space Agency/European Space Components Information Exchange System (ESA/ESCIES).


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Avago introduces PA for LTE cellular infrastructure equipment

MMICs & More
Avago Technologies
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Avago_MGA-43128Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.


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