Ted Rappaport, founding director of NYU WIRELESS and a leading proponent of using the millimeter wave spectrum for wireless communications, discusses the FCC's recent rulemaking actions and technology developments that are paving the way to 5G.
WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry, announced the release of its sixth generation Enhancement-Depletion mode GaAs Pseudomorphic HEMT technology for high performance RF and mmWave applications.
M/A-COM Technology Solutions (MACOM) will showcase a broad portfolio of new products for aerospace, defense and network applications, and present a technical paper during European Microwave Week in Nuremberg, Germany, October 6-11, 2013. Event attendees can visit MACOM at European Microwave Week in Nuremberg, Germany, October 6-11, 2013, Booth #169.
A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) power amplifier (PA) design approach from a systems perspective.
KCB Solutions, an ITAR and AS9100 accredited microwave design and manufacturing center, is pleased to announce a new line of fully-screened Hi-Rel switches, attenuators, and power amplifiers. These GaAs devices meet the screening and qualification requirements of MIL-PRF-38534 and MIL-PRF-38535 and are available in a choice of leaded packages or newly qualified KCB hermetic QFNs.
RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.
Hittite Microwave Corp. launched three new GaAs pHEMT MMIC power amplifiers which cover the 9 to 14 GHz frequency range and are ideal for microwave radio, military and space, SATCOM and test and measurement applications.
Hittite Microwave Corp. has released a new broadband GaAs pHEMT MMIC low noise amplifier. The HMC374SC70E is housed in a compact 2.15 x 2.1 mm surface mount package and is ideal for applications from 0.3 to 3.0 GHz.
United Monolithic Semiconductors (UMS) has announced that the PPH15X-10 MMIC GaAs power PHEMT process has been successfully space evaluated and is now part of the European Preferred Part List established by the European Space Agency/European Space Components Information Exchange System (ESA/ESCIES).