Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.
Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Diamond Antenna & Microwave Corp. and Diamond-Roltran LLC announce the successful upgrade of an old ASR-8 Air Traffic Control rotary joint that adds Mode-S functionality and maintenance-free Roll-Rings®.
API Technologies Corp. announced a new high gain, circularly polarized antenna array developed for Inmarsat services. It is designed for use in a variety of applications including satellite networks, two-way voice and data communications and broadband portable terminals.