Focus Microwaves of Montreal, Quebec announced that it has acquired the Pulsed IV and Bias-Tee lines of AURIGA Microwave, of Chelmsford, Mass. Focus also hired key Auriga personnel, in order to support customers, fulfill existing and pending pulse system orders and to push further product development.
M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance RF, microwave, millimeter wave and photonic products, today announced the release of a high power pulsed amplifier designed for civil air traffic control and weather radar applications.
Auriga Microwave announces imec as the first in Europe to purchase Auriga's latest generation pulsed IV/RF characterization system, the AU4850. Imec will use the system to test and characterize imec's 200 mm GaN-on-Si CMOS compatible power transistors.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
Auriga Microwave and Focus Microwaves, RF microwave industry market leaders, integrated their showcase systems, Auriga's AU4850 Pulsed IV/RF Characterization System and Focus' Harmonic Load-pull System to provide users unmatched measurement capabilities. Responding to market demands, Auriga and Focus have developed a software bridge to provide users harmonic pulsed load-pull measurement capability. The software will be offered by both companies through their respective sales channels.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.