Items Tagged with 'gan-based'

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IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.

RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.