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Items Tagged with 'gan-based'

ARTICLES

Richardson RFPD launches the next generation of the TriQuint GaN Tech Hub

Richardson RFPD Inc. announced the launch of the next generation of the TriQuint GaN Tech Hub, a micro-website featuring the latest news on gallium nitride (GaN) innovations and product releases from TriQuint.


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CTT announces compact, GaN-based SSPAs designed for X-Band

CTT Inc. announces a new family of compact, GaN-based solid-state power amplifiers (SSPAs) operating in the 7 to 11 GHz frequency range for a wide variety of commercial, industrial and military microwave applications. CTT’s latest compact SSPA designs offer as much as 100 watts of output power in a compact package. 


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IQE and II-VI Inc. launch 150mm GaN HEMT epi wafers on SiC substrates

IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.


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RFMD expands GaN matched power transistor family

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.


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RFMD expands GAN matched power transistor family

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.


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