Cobham and RFHIC will jointly develop GaN High Power Amplifier (HPA) modules that will be integrated into a prototype 175 kW solid-state transmitter. Development activities under this Memorandum of Agreement will be executed by Cobham Integrated Electronics Solutions, a business unit of CAES at its Exeter, N.H. site.
The world's newest missile defense radar is gearing up for a road trip. Raytheon Co. funded, developed and built a new Gallium Nitride (GaN) powered Active Electronically Scanned Array main antenna for the combat-proven Patriot Air and Missile Defense System. Raytheon will exhibit its prototype Patriot full-scale, GaN-based AESA radar in the company's booth at the Association of the United States Army's Global Force Symposium and Exposition in Huntsville, Ala., March 15-17.
Advantech Wireless, a global leader for satellite broadband communications solutions, announced a substantial increase in bookings for its award winning line of gallium nitride (GaN) based Solid State Power Amplifiers (SSPAs) in the first half of the fiscal year 2016.
Advantech Wireless, a global leader for Satellite broadband communications solutions, announced today the release of the Second Generation Super Compact TT Series GaN Technology based 300 W C-Band BUC.
Richardson RFPD Inc. announced the launch of the next generation of theTriQuint GaN Tech Hub, a micro-website featuring the latest news on gallium nitride (GaN) innovations and product releases from TriQuint.
CTT Inc. announces a new family of compact, GaN-based solid-state power amplifiers (SSPAs) operating in the 7 to 11 GHz frequency range for a wide variety of commercial, industrial and military microwave applications. CTT’s latest compact SSPA designs offer as much as 100 watts of output power in a compact package.
IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.
RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.