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Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree). The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs.
Cree Inc. and Eta Devices Inc. will demonstrate the world’s most efficient reported power amplifier for mobile base stations at the 2013 Mobile World Congress, February 24-28 in Barcelona, Spain.
Richardson RFPD Inc. announced it has completed an agreement to distribute Silicon Carbide power products from Cree Inc. Under the agreement, Richardson RFPD will distribute Cree's SiC Schotty diodes, MOSFETs and power modules worldwide.
Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.
Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.
Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.
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