Semiconductors / Integrated Circuits

The LO harmonic effects on I/Q errors and sideband suppression (SBS) in the RF modulator was analyzed in application report SLWA059. This application report further investigated LO harmonic effects when attempting to achieve an increased level of SBS performance.

As GaN power device technology matures and gains acceptance suppliers must prove its reliability. This paper will provide an overview of the testing approaches used to establish failure rates and will provide a comparison of DC and RF based HTOL methods. The primary focus of this paper will be the high power RF HTOL test method used by M/A-COM Technology Solutions to qualify its new MAGX line of discrete GaN on SiC RF Power Transistors.

A new family of ultra-reliable mixers, developed by Mini-Circuits, combines low-temperature cofired ceramic (LTCC) circuitry and specially selected semiconductor dice in a hermetically sealed case at 1/10th the price of comparable products on the market. Fully automated, tightly-controlled, and highly repeatable processes ensure excellent performance at temperatures up to 125 degrees C.

This application note presented by Richardson RFPD discusses the major causes of nonideal sideband suppression and discusses design considerations for component selection and PCB design/layout.

The published specifications for leakage current in RF power devices are often a source of concern and confusion for engineers and technicians. This paper examines the real meaning behind the leakage current specifications and offers guidance on properly testing a device for leakage current.