advertisment Advertisement
advertisment Advertisement

Freescale’s Power Amplifier Design Methodology Innovations

/ Print /
| ShareMore
/ Text Size +
1/10/13 1:00 pm to 1/10/13 2:00 pm EST

Agilent EDA 468x98 10jan13

Innovations in EDA Webcast

 

Title:
Freescale’s Power Amplifier Design Methodology Innovations

Date:
January 10, 2013

Time:
10:00 AM PT/ 1:00 PM ET/ 6:00 PM UTC

Why this webcast is important:
This presentation provides an overview of a CAD-based design approach for high-power RF/Microwave power transistors. These packaged transistors are typically constructed using several LDMOS die each with total gate peripheries up to 150 mm, metal-oxide-semiconductor (MOS) capacitors, arrays of bondwires, and are all placed within a metal-ceramic or plastic package.

To tackle the demanding design environment, a multi-technology, multiple design-kit approach has been used within Agilent’s Advanced Design System. These kits contain components that have accurate models, layout and schematic views, and are enabled to work with Momentum and/or Finite-Element-Method (FEM). This suite of design-kits standardizes the design process, enables design-re-use, and design rule check to improve design for manufacturability.

In this presentation, we will review aspects of the designer use-model where trade-offs between accuracy and simulation time must often be considered. For example, during the initial design, simple lumped component models may be used to study matching topologies. As the design progresses, design-kit components can be used for more accuracy and they support a straight-forward transition to full 3-D electromagnetic simulation with FEM. Additional libraries are later used to simulate the printed-circuit board to create high-efficiency Doherty power amplifiers.

Who should attend:
Power Amplifier Designers

Presenter:
Dr. Peter H. Aaen, RF Modeling and Measurement Technology Team, Freescale Semiconductor
Peter H. Aaen received the B.A.Sc. degree in Engineering Science and the M.A.Sc. degree in Electrical Engineering, both from the University of Toronto, Toronto, ON, Canada, and the Ph.D. degree in Electrical Engineering from Arizona State University, Tempe, AZ., USA, in 1995, 1997 and 2005, respectively. He is the Manager of the RF Modeling and Measurement Technology team of the RF Division of Freescale Semiconductor, Inc., Tempe, AZ, USA; a company which he joined in 1997 (then Motorola Inc., Semiconductor Product Sector).

His areas of expertise include calibration techniques for microwave measurements, development of package modeling techniques, development of passive and active compact models for the design of microwave power transistors and ICs, and efficient electromagnetic simulation and optimization methodologies for complex packaged environments. His current work focuses on the development and validation of multi-physics based modeling methodologies for high-power and high-frequency electronic devices.

He is a Senior Member of the IEEE, a member of the Microwave Theory and Techniques and Electron Devices Societies, and is an active member of many technical committees including: MTT-1 Computer-Aided Design, technical program committee (TPC) of the IEEE Conference on Electrical Performance of Electronic Packaging and Systems, and the IMS TPRC sub-committee for CAD Algorithms and Techniques. Most recently he served the ARFTG community as the Technical Program Chair for the 78th Symposium held in Tempe, AZ.

Dr. Aaen co-authored Modeling and Characterization of RF and Microwave Power FETs (Cambridge University Press, 2007) and has authored over thirty papers, articles and workshops in the fields of electromagnetic simulation, package modeling, and microwave device modeling and characterization.

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement