Starting in 1978 as the GaAs IC symposium, CSICS has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits, embracing GaAs, InP, GaN, SiGe, as well as nanoscale CMOS technology. Coverage includes all aspects of the technology from materials issues, device fabrication and modeling through IC design and testing, high volume manufacturing, and system applications. Specific technical areas of interest include: 

• Innovative device concepts in emerging technologies 
  • GaN, InP, III-V on Si, Ge on Si, Graphene 
• Analog, RF, mixed-signal, mm-wave, THz circuit 
• Blocks and ICs in III-V, CMOS, and SiGe BiCMOS 
• Power conversion circuits and technologies 
• Optoelectronic and photonic devices and OEICs
• System applications 
  • Wireless handsets and base stations 
  • Vehicular and military RADAR 
  • High-speed digital systems 
  • Fiber optics and photonics
• Device and circuit modeling / EM and EDA tools
• Thermal simulation and advanced packaging of high-power devices and ICs
• Device and IC manufacturing processes, testing methodologies, and reliability