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Sumitomo Electric Device Innovations

Company Profile

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Contact Information

Phone: (408) 232-9500

Location

Sumitomo Electric Device Innovations
2355 Zanker Rd.
San Jose CA 95131-1138
United States

SEDU provides communication system OEMs access to the broadest array of optical and wireless communication products.  These products play an essential part in supporting the global communications infrastructure. Sumitomo Electric's world-class research and manufacturing capabilities in optical and mobile technologies continue to expand and strengthen our product portfolio, while maintaining industry-leading levels of reliability with our accumulated technologies combined with resources for product development, manufacturing, quality assurance and sales engineering.

Products

C to Ka Band Power Amplifier MMICs: EMM5077VU

December 30, 2016

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EMM5077VU - Power GaAs, C to Ka band power amplifier MMICs (Packages.) The EMM5077VU is a power amplifier MMIC that contains a two stage amplifier, internally matched, for standard communications band in 3.4 to 5.0 GHz frequency range. SEI's stringent Quality Assurance Program assures the highest reliability and consistent performance.

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GaN HEMTs for Base Station: SG26F30S-D

December 30, 2016

Sum 2 z2d_photo-lSEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-Band amplifiers with 50 V operation, and gives you higher gain. This device targets applications that are driver stage and final stage of micro cell for base transceiver stations.

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GaN HEMTs for General Purpose: SGNE070MK

December 30, 2016

Sumi 4 lg-shortlead_photo-lSEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50 V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage.  0.9 GHz

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GaN HEMTs for Radar: SGN1214-220H-R

December 30, 2016

Sumi 3 iv_photo-lSumitomo GaN-HEMT SGN1214-220H-R offers high power, high efficiency, ease of matching and greater consistency covering 1.2 to 1.4GHz for L-band radar applications with 50V operation. The low thermal resistance allows to use long pulse up to 5 msec pulse width with duty of 10%.

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Low-Noise GaAs HEMTs: FHC30LG

December 30, 2016

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FHC30LG Low-noise GaAs HEMT

Noise figure NF Typ. (dB): 0.35
Associated Gain Gas Typ. (dB): 14.5
Drain Voltage VDS (V): 2
Drain Current lDS (mA): 10

And more...

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Power GaN HEMT for Radio Link and SATCOM: SGK5867-30A

December 30, 2016

Sum1 1 ibk_photo-lThe SGK5867-30A is a high power GaN-HEMT that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.  5.85-6.75 GHz, C-Band Internally Matched GaN-HEMT.

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Small Signal GaAs FETs: FSU01LG

December 30, 2016

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FSU01LG - Small Signal GaAs FET

Part Number:  FSU01LG
Class:  Small Signal GaAs FET
Outline/Package:  LF (Shortlead)
P1dB Typ.:  20 dB 

And more...

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