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RFMD

Company Profile

RFMD Logo 150x39

Contact Information

Phone: (336) 664-1233
Fax: (336) 678-0180

Location

RFMD
7628 Thorndike Rd.
Greensboro NC 27409-9421
United States

Products

Power Amplification Solution: RFFM82x5 and RFFM85x5

March 06, 2013

7bb18af9ed14e8ffRF Micro Devices, Inc. announced it is shipping production volumes of its power amplification solutions that are compatible with Broadcom's 5 G WiFi chips. RFMD developed the RFFM82x5 (2.4 GHz) and RFFM85x5 (5 GHz) FEMs with Broadcom's 5 G WiFi chips, which are based on the IEEE 802.11ac standard. The combined solution delivers faster throughput and expanded range for an enhanced user experience.

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5 GHz WiFi Front End Module: RFFM4501E

January 07, 2013

RFFM4501ERF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD’s newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150 to 5.850 GHz frequency band.

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Broadband SPDT Switch: RFSW1012

December 20, 2012

RFSW1012The RFSW1012 is a single-pole double-through (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the RFSW1012 makes it ideal for use in LTE, WCDMA, and CDMA applications.

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High-Isolation SPDT Switch: RFSW6124

December 11, 2012

RFSW6124_SPThe RFSW6124 is an SPDT RF switch featuring a symmetric design for exceptional isolation. Typical applications for this GaAs pHEMT switch include cellular base stations and other communications systems requiring high linearity and power-handling capability.

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WiFi Front End Modules: RFFM8xxx Series

December 04, 2012

RFFM8202_SPRFMD’s new RFFM8xxx series provide complete integrated solutions in single front end modules (FEMs) for WiFi systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.

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Synthesizer/VCOs with Mixer: RFFC207xA and RFFC507xA Series

November 20, 2012

RFFC2071A_SPThe RFFC207xA and RFFC507xA series of parts are reconfigurable frequency conversion devices with an integrated fractional-N phased locked loop (PLL) synthesizer, voltage controlled oscillator (VCO), and one or two high linearity mixers. The fractional-N synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products.

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GaN HEMT Amplifiers: RFHA104x Series

November 12, 2012

RFHA1042_SPRFMD’s new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. These high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design.

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InGaP HBT Amplifier: RFCA1008

November 08, 2012

RFCA1008_SPRFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliability. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance.

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Linear Power Amplifiers Modules: RF73xx Series

November 07, 2012

RF7303_SPThe parts in RFMD’s new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3 V, 50 Ω LTE mobile cellular equipment developed for E-UTRAN/LTE band operation. These parts are developed for 5 to 20 MHz LTE channel bandwidths.

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CATV Amplifiers: RFPD2940, RFPP2870 and RFCM3080

October 17, 2012

RFPD2940_SPRF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as GaN-based push-pull CATV amplifiers, RFPP2870 and RFCM3080.

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Single-Chip Front End Module: RFFM6901

October 17, 2012

RFFM6901RFMD’s RFFM6901 is a single-chip front end module (FEM) for applications in the 868/915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.

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High Linearity WiFi Front End Modules

October 09, 2012

RFFM4203_SPRFMD’s new high linearity WiFi front end modules provide complete integrated solution in a single front end module (FEM) for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability costs.

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GaN Power Doubler Module: RFCM2680

September 25, 2012

RFCM2680_SPThe RFCM2680 is the industry's first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45 to 1003 MHz with excellent distortion performance.

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EDGE QAM Amplifier Module: RFAM2790

August 28, 2012

RFAM2790The RFAM2790 is an integrated EDGE QAM amplifier module employing a GaAs pHEMT die, a GaAs MESFET die, a 20 dB range variable attenuator, and a power enable feature. It provides high output power, excellent linearity, and superior return loss performance with low noise and optimal reliability.

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Transmit/Receive Module: RF6549

August 14, 2012

RF6549Designed for 868MHz and 902 to 928MHz AMR solutions, RFMD’s new RF6549 features separate ports for Rx and Tx paths, and two ports on the output for connecting a diversity solution or a test port. The PA section includes a nominal output power of 28 dBm. The device comes in a 6 mm x 6 mm, 32-pin package.

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Digital Step Attenuators: RFSA2644 / 2654

August 09, 2012

RFSA2644RFMD’s new RFSA2644/2654 6-bit digital step attenuators (DSAs) feature high linearity over their entire 31.5 dB gain control range with excellent step accuracy in 0.5 dB steps. They are programmed via a serial mode control interface that is both 3 and 5 V compatible.

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Circulators: RFCR2207 and RFCR2208

August 07, 2012

RFCR2207-2208RFMD’s new small profile, low-cost, drop-in RFCR220x circulators are designed for various wireless applications. They feature robust construction for high reliability, low insertion loss, excellent IMD (Inter-Modulation Distortion) performance, and are magnetically shielded. They are also RoHS compliant.

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Linear Power Amplifier

August 06, 2012

RFPA1012RFMD's new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

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Tx/Rx Front End Modules: RF65x9 Series

August 06, 2012

RF6509The RF65x9 series of Tx/Rx Modules integrate a complete solution in a single front end module (FEM) for AMI/AMR and Smart Grid solutions. The FEMs integrate a PA, Tx filtering, input and output switches, a Tx or Rx attenuation path, and an LNA with bypass mode.

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InGaP HBT Power Amplifier: RFPA2089

July 24, 2012

RFPA2089_SPRFMD’s new RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.

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Digital Step Attenuators: RFSA2514/2524

July 17, 2012

RFSA2514RFMD’s new RFSA2514/2524 5-bit digital step attenuators (DSAs) feature high linearity over their entire gain control range with excellent step accuracy in 0.5dB (RFSA2514) or 1 dB (RFSA2524) steps. They are programmed via a serial mode control interface that is both 3 and 5 V compatible.

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Front End Module: RF5836

July 09, 2012

RF5836_SPRFMD’s new RF5836 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.

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Three Power Amplifiers: RFPA1002, 1003, and 1702

June 26, 2012

RFPAFamilyRF Micro Devices, Inc. a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of three new power amplifiers for high-frequency point-to-point radio applications. RFMD's RFPA1002, RFPA1003, and RFPA1702 deliver >1 W RF output power in the 10 to 20GHz frequency bands and expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets.

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Variable Gain Amplifier: RFVA0016

June 18, 2012

RFVA0016_SPRFMD’s new RFVA0016 is an integrated, analog-controlled, variable gain amplifier (VGA) for broadband applications with external matching, allowing operation in all bands from 400 to 2700 MHz with a single module. It features exceptional linearity, OIP3 > 40 dBm, and provides a >30 dB gain control range.

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Power Amplifier: RFPA1012

June 11, 2012

RFPA1012_SPRFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

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Wideband Power Amplifier: RFHA1006

June 06, 2012

RFHA1006_SPRFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

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High Power Front End Module: RFFM7600

May 24, 2012

RFFM7600_SPRFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.

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SP3T Symmetric Switch: RFSW6131

May 24, 2012

RFSW6131_SPRFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.

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Transmit/Receive Front End Modules: RF65x9 Series

May 24, 2012

RFMDrf6509The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.

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SP3T Switch

May 11, 2012

RFSW6131The RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3 G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability. The RFSW6131 is 3 V and 5 V positive logic compatible.

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High Linearity, Low Noise I/Q Converters

May 08, 2012

RFRX1701RFMD adds four new high linearity, low noise I/Q converters for 17 to 27 GHz applications. The two upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors. The two downconverters incorporate an image rejection mixer, LO buffer amplifier, and integrated LNA. Each device is packaged in a 5 x 5mm QFN to simplify both system-level board design and volume assembly.

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Multi-Path Switch Modules: RF1255, RF1291, RF1292

April 25, 2012

RF1255RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation.

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Narrowband MMIC VCOs with Integrated Dividers: RFVC183x and RFVC184x Series

April 12, 2012

GaAsInGaPrfvcSeriesRFMD’s new GaAs InGaP RFVC183x and RFVC184x series MMIC VCOs offer low phase noise and include integrated frequency dividers for Fo/2 and Fo/4 output frequency, as well as integrated RF output buffer amplifiers.

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GaAs Amplifier: RFCA3302

April 12, 2012

RFCA3302RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40 to 1008 MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations.

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GaAs MMIC IQ Downconverters: RFRX1001 and RFRX1002

April 12, 2012

RFRX1001RFMD introduces their GaAs MMIC IQ downconverters RFRX1001 and RFRX1002. The RFRX1001 is a 10 to 15.4 GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors. The RFRX1002 is a 9 to 14GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors.

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GaAs pHEMT Up-Converter: RFUV1002 and RFUV1003

April 12, 2012

RFUV1002RFMD releases updates on their GaAs pHEMT up-converters. RFUV1002 is a 9 to 14 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier, a balanced single-side band (image rejection) mixer, followed by a variable gain amplifier and a DC decoupling capacitor. RFUV1003 is a 12 to 16 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier.

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Handset Module Solution

January 17, 2011

RFMDThe POLARIS 2™ TOTAL RADIO™ module solution is comprised of a cellular transceiver module and a cellular transmit module for handsets operating on the GSM/GPRS and GSM/GPRS/EDGE networks.

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InGaP HBT Power Amplifiers for Wireless Infrastructure Applications

January 17, 2011

SPA-14-526Z_100The SPA-1426Z and SPA-1526Z InGaP PAs address base station applications across all cellular standards and frequencies. Operated as Class A PAs, these devices have unmatched performance where backed off linearity is crucial to HPA performance.

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ML5830 ASK & FSK Transmitter

January 17, 2011

RFMD_SL_ML5830_100The ML5830 is a single chip fully integrated Amplitude Shift Keyed (ASK) and Frequency Shift Keyed (FSK) transmitter developed for a variety of applications operating in the 5.790GHz to 5.840GHz band. The ML5830 ASK modulator is designed for symbol rates of 512ksps, 1024ksps, and 2048ksps.

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New Quad-band Transmit Modules

January 17, 2011

RF3234_SPRFMD’s RF3232, RF3233, and RF3234 quad-band transmit modules are ideal for the final portion of the transmitter section in multi-mode 3G entry handsets and connected devices. These modules are the core of RFMD’s RF323x Power Platform and include 50Ω matched input and output ports, eliminating the need for external PA-to-antenna switch module matching components.

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RF3021 SPDT Switch

January 17, 2011

RF3021_100The RF3021 is a reflective single-pole double throw (SPDT) switch designed for general purpose switching applications which require low insertion loss and high power handling capability. Ideally suited for battery operated applications requiring low insertion loss and switching with very low DC power consumption.

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RF3161

January 17, 2011

RFMDrf3161SThe RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50 dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50 Ohm input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications.

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RF3822

January 17, 2011

RFMDRF3822LsmallRFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.

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RF3826 GaN Wide-Band Power Amplifier

January 17, 2011

RS-279RFMD’s RF3826 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package.

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RF386X

January 17, 2011

RFMDRF386xLRFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.

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RF3931 Unmatched Power Transistor

January 17, 2011

RF3931RFMD® Announces Major Gallium Nitride (GaN) Milestones. RFMD Qualifies and Releases First GaN Device. Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers.

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RF393X

January 17, 2011

RFMDRF3930_34LsmallRFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.

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RF5602 Linear Power Amplifier

January 17, 2011

RF5602The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters.

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RF5755 Front End Module

January 17, 2011

IMSInsiderRFMD5755RFMD’s RF5755 front end module delivers a complete integrated solution for handset/handheld WLAN 802.11b/g/n and Bluetooth® systems. The module also features integrated matching circuitry with output harmonic attenuation, reducing BOM and manufacturing costs.

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RF6460 Front End Platform

January 17, 2011

rfmd_100RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, introduced the RF6460, RFMD's most highly integrated and scalable 3G/4G cellular front end platform. The RF6460 front end platform features an ultra-compact "converged" multi-band, multimode architecture (2G/2.5G/3G/4G)

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RF71xx Transmit Modules

January 17, 2011

RF717x_familyRF Micro Devices introduced three new products – the RF7170, RF7171, and RF7172, expanding RFMD's industry-leading family of dual- and quad-band GSM/GPRS transmit modules. The RF71xx family of transmit modules is the industry's highest volume GSM/GPRS transmit module product family.

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RFMD® 2007 Designer’s Handbook

January 17, 2011

RFMDHandbook_CD_07smallAvailable in hard copy and CD, the Designer’s Handbook showcases RFMD’s broad product portfolio of RF systems and solutions for applications that drive mobile communications.

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News

RFMD achieves 49% YOY growth in quarterly revenue

April 24, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the company's fiscal 2013 fourth quarter, ended March 30, 2013.

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RFMD appoints industry leader James Clifford as VP, foundry services

April 02, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the appointment of James A. Clifford as vice president, foundry services, effective April 1, 2013.

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RFMD announces flexible GaAs sourcing strategy

March 19, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.

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RFMD selected by leading smartphone manufacturer to support 4th-gen flagship smartphone

March 15, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has been selected by a leading smartphone manufacturer to supply multiple 3G/4G LTE components into a recently announced fourth-generation flagship smartphone platform.

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RFMD unveils suite of products to enable entry Smartphone segment

February 27, 2013

RF Micro Devices Inc. announced the expansion of the company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.

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RFMD expands leadership in RF power management

February 26, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the addition of multiple new products to RFMD's industry-leading portfolio of envelope tracking (ET) power management and power amplifier (PA) solutions.

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RFMD expands portfolio of multimode multi-band PAs

February 25, 2013

RF Micro Devices Inc. announced the expansion of the company's family of multimode multi-band (MMMB) power amplifiers (PA) to include the highly integrated RF7388 3G/4G MMMB PA.

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RFMD to showcase industry-leading products and technologies at MWC 2013

February 20, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the company will present its expanding portfolio of industry-leading radio frequency (RF) components for smartphones, tablets and other data-centric mobile devices at the 2013 Mobile World Congress (MWC 2013).

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RFMD announces extension of share repurchase program

February 01, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced today that the company's board of directors has authorized an extension of RFMD's 2011 share repurchase program to repurchase up to $200 million of the company's common stock through January 31, 2015.

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RFMD unveiled highly-integrated FEM for smart energy/AMI applications

January 14, 2013

RF Micro Devices Inc. unveiled a highly-integrated front end module (FEM) for Smart Energy/Advanced Metering Infrastructure (AMI) applications at the 2013 Consumer Electronics Show (CES) in Las Vegas. RFMD’s single-chip RFFM6403 FEM delivers industry-leading performance, reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405 to 475 MHz frequency range, as well as for portable battery powered equipment and general 433/470 MHz ISM band systems.

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RFMD to webcast quarterly earnings conference call on 1/22/13

January 08, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, will host a conference call to review fiscal 2013 third quarter financial results on Tuesday, January 22, 2013, at 5:00 p.m. (ET).

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RFMD introduces 5 GHz WiFi Module for 802.11ac notebooks/mobile equipment

January 07, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD's newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz — 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.

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RFMD's Kevin Kobayashi named IEEE Fellow

January 03, 2013

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.

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RFMD to exhibit at CES 2013

January 02, 2013

RFMD returns to 2013 International CES with its industry-leading product portfolio and, as members of the ZigBee® Alliance, the company will be exhibiting in the ZigBee® Pavilion, Booth 20618 South Hall 1.

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RFMD introduces FEM for smart metering/smart energy and ISM band apps

November 14, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz — 960 MHz frequency band.

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RFMD releases family of linear GaN power transistors

November 13, 2012

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

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RFMD to accelerate growth in entry-level smartphone segment through acquisition of Amalfi Semiconductor

November 05, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced a definitive agreement to acquire Amalfi Semiconductor (Amalfi), a leading fabless semiconductor company specializing in cost effective, high performance RF and mixed-signal ICs for the rapidly growing entry-level smartphone market.

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RFMD appoints Alan Hallberg as chief marketing officer

October 24, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of Alan Hallberg as the company's corporate vice president and chief marketing officer (CMO). In the role of CMO, Hallberg will oversee RFMD's global marketing activities and will be based in RFMD's growing Silicon Valley, CA, location.

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RFMD introduces new control components for cable applications

October 18, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled two new CATV control components, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch (SPDT).

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RFMD to showcase wired broadband components at SCTE Cable-Tec Expo 2012

October 12, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

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RFMD to webcast quarterly earnings conference call on 10/23/2012

October 09, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, will host a conference call to review fiscal 2013 second quarter financial results on Tuesday, October 23, 2012, at 5:00 p.m. (ET). The conference call will be webcast live on the company's web site at http://www.rfmd.com (under "Investors").

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RFMD commences LTE shipments to Samsung

August 20, 2012

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

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RFMD shareholders approve all proposals during 2012 annual meeting of shareholders

August 17, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that all agenda items at RFMD's 2012 Annual Meeting of Shareholders were approved by the shareholders.

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RFMD commences LTE shipments to Samsung

August 13, 2012

RF Micro Devices Inc. announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

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RFMD's high-performance CATV amplifiers receive "Product of the Year" awards

August 08, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it received "Product of the Year" Awards from Cable Spotlight for three of its broadband cable television (CATV) products.

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RFMD introduces WiFi front end modules at IMS 2012

June 25, 2012

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD’s FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world’s leading WiFi chipset providers.

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RFMD expands wireless product portfolio with integrated VGA

June 21, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).

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RFMD expands GaN matched power transistor family

June 20, 2012

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

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RFMD expands GAN matched power transistor family

June 19, 2012

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

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RFMD introduces WiFi front end modules at IMS 2012

June 19, 2012

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD's FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world's leading WiFi chipset providers.

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RFMD to exhibit at IMS 2012

June 12, 2012

Explore the RFMD® industry-leading RF and microwave product portfolio in booth 1210, with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, microwave MMICs, and custom foundry services. Read More

RFMD to showcase high-performance RF components at IMS 2012

June 11, 2012

RF Micro Devices Inc. announced it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth 1210 at the Palais des congres Montreal, Canada.

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RFMD to present at the Stephens Inc. Spring Investment Conference

May 30, 2012

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that company executives are scheduled to present at the 2012 Stephens Inc. Spring Investment Conference in New York, NY on Wednesday, June 6, 2012, at 9:00 a.m. Eastern Time.

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RFMD to present at the Barclays Capital Global Technology, Media and Telecommunications Conference

May 15, 2012

RF Micro Devices, Inc. announced that company executives are scheduled to present at the 2012 Barclays Capital Global Technology, Media And Telecommunications Conference in New York, NY on Tuesday, May 22, 2012, at 10:15 a.m. Eastern Time.

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RFMD teams with Silicon Labs to deliver sub-GHz solution

May 07, 2012

RF Micro Devices Inc. announced it has teamed with Silicon Laboratories Inc. to deliver Sub-GHz solutions for a broad range of smart grid applications.

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RFMD unveils rGaN-HV process technology

April 26, 2012

RFMD rGaN-HVRF Micro Devices, Inc. announced the extension of RFMD's industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.

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RFMD announces March quarterly results

April 25, 2012

RF Micro Devices, Inc. reported financial results for its fiscal 2012 fourth quarter, ended March 31, 2012.

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RFMD achieves ISO/TS 16949 certification

April 24, 2012

RF Micro Devices, Inc. announced it has been granted ISO/TS 16949 certification. The ISO/TS 16949 certificate is the highest international quality standard for the automotive industry, and ISO/TS 16949 certification demonstrates RFMD’s commitment to excellence in product design and manufacturing processes for automotive applications.

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RFMD adds four new high linearity, low noise I/Q converters

April 17, 2012

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor. Each device is packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.

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RFMD announces retirement of co-founder Jerry D. Neal from the company

April 12, 2012

RF Micro Devices, Inc. announced that Jerry Neal, co-founder and executive vice president of marketing, is retiring from RFMD, effective May 31, 2012.

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Articles

Taming the Smartphone Power Consumption Vicious Cycle

November 14, 2012

Describes three design techniques and how each approaches system efficiency and power management from different angles

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Samsung selects RFMD's PowerSmart to power GALAXY Note II

September 05, 2012

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms — the industry's first and only converged multimode, multiband (MMMB) power amplifiers.

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GaN Powers High Speed Wireline Networks

June 14, 2012

Illustrates how GaN die-based amplifiers solve operator needs, compares and quantifies GaN die-based solutions versus alternatives and provides a glimpse of future wireline network capabilities when GaN is enabled Read More

RFMD PowerSmart™ Versatility for the Emerging Smartphone Market

April 06, 2011
As 4G and LTE technology captures much of the RF design community’s attention, handset OEMs, chip manufacturers and network providers see incredible growth opportunities in the smartphone emerging market, where lack of computers and wired infrastructure positions mobile devices as the best opportunity for people to connect to the... Read More

Multimedia

RFMD(r) High-Reliability Manufacturing Capabilities

RFMD has designed and manufactured standard and custom RF and microwave ICs, MMICs, and modules for aerospace, defense, and homeland security applications for 50+ years. Our breadth of products and manufacturing capability, combined with our expertise in understanding program requirements, results in a complete solution for RF and microwave applications.

RFMD(r) High Power Packaging Capabilities

RFMD develops and manufactures unmatched compound semiconductor technologies and offers custom foundry services. Our manufacturing scale - supported by the largest III-V factory in the world - enables best-in-class cycle times backed by our on-time shipment pledge. RFMD's track record as a high-volume, reliable supplier has earned us "preferred partner" status with the industry's top OEMs.

RFMD(r) Integrated Synthesizer and Mixer Design Kit Quick Start

The DK205x and DKFC design kits have been developed to enable an in-depth evaluation with minimum effort. All design kits consist of an evaluation board with a plug-in USB serial adapter, a USB cable, and a 5pcs sample bag. The software has been designed for 32-bit and 64-bit PCs running Windows 2000, XP, Vista, and 7.

Smart Grid - ZigBee(r) HAN/Smart Energy Demonstration

RFMD's portfolio of single-chip integrated FEMs is developed for high-performance ZigBee® HAN/Smart Energy applications in the 2.4 GHz to 2.5 GHz ISM band. The RF6525, RF6515, and RF6535 are specifically designed to operate with the Ember EM300 Series System-on-Chips (SoCs) - EM351 and EM357, EM250 SoC, and EM260 co-processor.

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Small-Signal Intermodulation Distortion in OFDM Transmission Systems

A system that utilizes OFDM/OFDMA, such as the E-UTRA (LTE) downlink or the IEEE 802.11a/g and the IEEE 802.16 physical layers, transmits OFDM symbols, each comprising a number of modulated sub-carriers carrying data or pilot symbols, with inter-subcarrier spacing being equal to or an integer multiple of a fixed frequency. The channel bandwidth (B) is determined by the number of 'occupied' (modulated) subcarriers and the subcarrier spacing.

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RFMD GaN RF Power Brochure

RFMD GaN is production ready—a mature, robust technology with extraordinary reliability.

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RFLA1018 /RFLA1038 Variable Gain, High Linearity, Low Noise Amplifiers Brochure

The RFLA1018 and RFLA1038 from RFMD are a multi-stage, low noise amplifiers (LNA) with variable gain, featuring high linearity and very low noise figure. These LNAs provides over 35 dB of dynamic gain range.

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RFMD Solutions for Wireless Infrastructure Brochure

RFMD's broad base of semiconductor and module technologies provide an ideal set of solutions for wireless infrastructure applications.

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RFMD Expands DSA Family with RFSA26x4 Brochure

RFMD’s RFSA2644 and RFSA2654 are 6-bit digital step attenuators (DSAs) that feature high linearity over the entire 31.5 dB gain control range with excellent step accuracy in 0.5 dB steps.

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RFMD Microwave MMICs Brochure

Our RF product solutions are ideal for point-to-point, satellite, or other high-frequency applications.

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2012-2013 RFMD Product Selection Guide

The 2012-2013 Product Selection Guide provides specifications for more than 750 products including more than 90 recently released products targeting multiple end-market applications. The 64-page guide allows customers to cross-reference and search products using end-market application diagrams.
 
RFMD's Product Selection Guide lists products servicing more than 15 end-market segments including Cellular, Point-to-Point Microwave Radio, WiFi, WiMAX, LTE, CPE, Smart Energy AMI,Zigbee®, Wireless Infrastructure, Military and Space, Broadband Transmission, Consumer, and others.

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Small-Signal Intermodulation Distortion in OFDM Transmission Systems

The small-signal nonlinear distortion of a system can be described with sufficient accuracy using a third order Volterra expansion of the output in terms of the input. This simple model assumes a memoryless, frequency independent amplifier system, whereby the amplifier characteristics remain constant over the operation bandwidth or, stated equivalently, the operation bandwidth is small compared with the available amplifier system bandwidth....

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Upconverters/Downconverters Brochure

The RFMD® GaAs pHEMT MMIC upconverters and downconverters combine high performance and low cost packaging, making them efficient solutions, ideally suited to both current and next generation point-to-point and VSAT applications. All devices are packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.

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RFSW6124 Brochure

RFMD offers a wide selection of broadband high-performance symmetric switches suitable for applications in the cellular, 3G, LTE, and other high-performance communications systems. Covering single-pole double-throw (SPDT), double-pole double-throw (DPDT), and single-pole triple-throw (SP3T), these products are ideal for use in high-performance and space-constrained applications.

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AMI-ZigBee Brochure

The RFMD® portfolio of single-chip integrated FEMs is developed for high performance AMI and ZigBee® applications in the 2.4 to 2.5 GHz, 915/868 MHz, and 433 MHz ISM bands.

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RFCA3302 Brochure

The RFMD® RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion (from 40 to 1008 MHz) make this part ideal for broadband cable applications.

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RFLA1018/1038 Brochure

The RFMD® RFLA1018 and RFLA1038 are multi-stage, low noise amplifiers (LNA) with variable gain, featuring high linearity and very low noise figure. These LNAs provides over 35 dB of dynamic gain range. A noise figure of 0.9 dB and an IIP3 of 3.5 dBm at maximum gain make these components ideal as infrastructure LNAs.

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