RFMD

RF Micro Devices, Inc. announced it is shipping production volumes of its power amplification solutions that are compatible with Broadcom's 5 G WiFi chips. RFMD developed the RFFM82x5 (2.4 GHz) and RFFM85x5 (5 GHz) FEMs with Broadcom's 5 G WiFi chips, which are based on the IEEE 802.11ac standard. The combined solution delivers faster throughput and expanded range for an enhanced user experience.

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD’s newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150 to 5.850 GHz frequency band.

The RFSW1012 is a single-pole double-through (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the RFSW1012 makes it ideal for use in LTE, WCDMA, and CDMA applications.

The RFSW6124 is an SPDT RF switch featuring a symmetric design for exceptional isolation. Typical applications for this GaAs pHEMT switch include cellular base stations and other communications systems requiring high linearity and power-handling capability.

RFMD’s new RFFM8xxx series provide complete integrated solutions in single front end modules (FEMs) for WiFi systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.

The RFFC207xA and RFFC507xA series of parts are reconfigurable frequency conversion devices with an integrated fractional-N phased locked loop (PLL) synthesizer, voltage controlled oscillator (VCO), and one or two high linearity mixers. The fractional-N synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products.

RFMD’s new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. These high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design.

RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliability. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance.

The parts in RFMD’s new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3 V, 50 Ω LTE mobile cellular equipment developed for E-UTRAN/LTE band operation. These parts are developed for 5 to 20 MHz LTE channel bandwidths.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as GaN-based push-pull CATV amplifiers, RFPP2870 and RFCM3080.

RFMD’s RFFM6901 is a single-chip front end module (FEM) for applications in the 868/915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.

RFMD’s new high linearity WiFi front end modules provide complete integrated solution in a single front end module (FEM) for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability costs.

The RFCM2680 is the industry's first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45 to 1003 MHz with excellent distortion performance.

The RFAM2790 is an integrated EDGE QAM amplifier module employing a GaAs pHEMT die, a GaAs MESFET die, a 20 dB range variable attenuator, and a power enable feature. It provides high output power, excellent linearity, and superior return loss performance with low noise and optimal reliability.

Designed for 868MHz and 902 to 928MHz AMR solutions, RFMD’s new RF6549 features separate ports for Rx and Tx paths, and two ports on the output for connecting a diversity solution or a test port. The PA section includes a nominal output power of 28 dBm. The device comes in a 6 mm x 6 mm, 32-pin package.

RFMD’s new RFSA2644/2654 6-bit digital step attenuators (DSAs) feature high linearity over their entire 31.5 dB gain control range with excellent step accuracy in 0.5 dB steps. They are programmed via a serial mode control interface that is both 3 and 5 V compatible.

RFMD’s new small profile, low-cost, drop-in RFCR220x circulators are designed for various wireless applications. They feature robust construction for high reliability, low insertion loss, excellent IMD (Inter-Modulation Distortion) performance, and are magnetically shielded. They are also RoHS compliant.

RFMD's new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

The RF65x9 series of Tx/Rx Modules integrate a complete solution in a single front end module (FEM) for AMI/AMR and Smart Grid solutions. The FEMs integrate a PA, Tx filtering, input and output switches, a Tx or Rx attenuation path, and an LNA with bypass mode.

RFMD’s new RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.

RFMD’s new RFSA2514/2524 5-bit digital step attenuators (DSAs) feature high linearity over their entire gain control range with excellent step accuracy in 0.5dB (RFSA2514) or 1 dB (RFSA2524) steps. They are programmed via a serial mode control interface that is both 3 and 5 V compatible.

RFMD’s new RF5836 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.

RF Micro Devices, Inc. a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of three new power amplifiers for high-frequency point-to-point radio applications. RFMD's RFPA1002, RFPA1003, and RFPA1702 deliver >1 W RF output power in the 10 to 20GHz frequency bands and expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets.

RFMD’s new RFVA0016 is an integrated, analog-controlled, variable gain amplifier (VGA) for broadband applications with external matching, allowing operation in all bands from 400 to 2700 MHz with a single module. It features exceptional linearity, OIP3 > 40 dBm, and provides a >30 dB gain control range.

RFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

RFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.

RFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.

The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.

The RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3 G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability. The RFSW6131 is 3 V and 5 V positive logic compatible.

RFMD adds four new high linearity, low noise I/Q converters for 17 to 27 GHz applications. The two upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors. The two downconverters incorporate an image rejection mixer, LO buffer amplifier, and integrated LNA. Each device is packaged in a 5 x 5mm QFN to simplify both system-level board design and volume assembly.

RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation.

RFMD’s new GaAs InGaP RFVC183x and RFVC184x series MMIC VCOs offer low phase noise and include integrated frequency dividers for Fo/2 and Fo/4 output frequency, as well as integrated RF output buffer amplifiers.

RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40 to 1008 MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations.

RFMD introduces their GaAs MMIC IQ downconverters RFRX1001 and RFRX1002. The RFRX1001 is a 10 to 15.4 GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors. The RFRX1002 is a 9 to 14GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors.

RFMD releases updates on their GaAs pHEMT up-converters. RFUV1002 is a 9 to 14 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier, a balanced single-side band (image rejection) mixer, followed by a variable gain amplifier and a DC decoupling capacitor. RFUV1003 is a 12 to 16 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier.

The POLARIS 2™ TOTAL RADIO™ module solution is comprised of a cellular transceiver module and a cellular transmit module for handsets operating on the GSM/GPRS and GSM/GPRS/EDGE networks.

The SPA-1426Z and SPA-1526Z InGaP PAs address base station applications across all cellular standards and frequencies. Operated as Class A PAs, these devices have unmatched performance where backed off linearity is crucial to HPA performance.

The ML5830 is a single chip fully integrated Amplitude Shift Keyed (ASK) and Frequency Shift Keyed (FSK) transmitter developed for a variety of applications operating in the 5.790GHz to 5.840GHz band. The ML5830 ASK modulator is designed for symbol rates of 512ksps, 1024ksps, and 2048ksps.

RFMD’s RF3232, RF3233, and RF3234 quad-band transmit modules are ideal for the final portion of the transmitter section in multi-mode 3G entry handsets and connected devices. These modules are the core of RFMD’s RF323x Power Platform and include 50Ω matched input and output ports, eliminating the need for external PA-to-antenna switch module matching components.

The RF3021 is a reflective single-pole double throw (SPDT) switch designed for general purpose switching applications which require low insertion loss and high power handling capability. Ideally suited for battery operated applications requiring low insertion loss and switching with very low DC power consumption.

The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50 dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50 Ohm input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications.

RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.

RFMD’s RF3826 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package.

RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.

RFMD® Announces Major Gallium Nitride (GaN) Milestones. RFMD Qualifies and Releases First GaN Device. Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers.

RFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.

The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters.

RFMD’s RF5755 front end module delivers a complete integrated solution for handset/handheld WLAN 802.11b/g/n and Bluetooth® systems. The module also features integrated matching circuitry with output harmonic attenuation, reducing BOM and manufacturing costs.

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, introduced the RF6460, RFMD's most highly integrated and scalable 3G/4G cellular front end platform. The RF6460 front end platform features an ultra-compact "converged" multi-band, multimode architecture (2G/2.5G/3G/4G)

RF Micro Devices introduced three new products – the RF7170, RF7171, and RF7172, expanding RFMD's industry-leading family of dual- and quad-band GSM/GPRS transmit modules. The RF71xx family of transmit modules is the industry's highest volume GSM/GPRS transmit module product family.

Available in hard copy and CD, the Designer’s Handbook showcases RFMD’s broad product portfolio of RF systems and solutions for applications that drive mobile communications.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the company's fiscal 2013 fourth quarter, ended March 30, 2013.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the appointment of James A. Clifford as vice president, foundry services, effective April 1, 2013.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has been selected by a leading smartphone manufacturer to supply multiple 3G/4G LTE components into a recently announced fourth-generation flagship smartphone platform.

RF Micro Devices Inc. announced the expansion of the company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the addition of multiple new products to RFMD's industry-leading portfolio of envelope tracking (ET) power management and power amplifier (PA) solutions.

RF Micro Devices Inc. announced the expansion of the company's family of multimode multi-band (MMMB) power amplifiers (PA) to include the highly integrated RF7388 3G/4G MMMB PA.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the company will present its expanding portfolio of industry-leading radio frequency (RF) components for smartphones, tablets and other data-centric mobile devices at the 2013 Mobile World Congress (MWC 2013).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced today that the company's board of directors has authorized an extension of RFMD's 2011 share repurchase program to repurchase up to $200 million of the company's common stock through January 31, 2015.

RF Micro Devices Inc. unveiled a highly-integrated front end module (FEM) for Smart Energy/Advanced Metering Infrastructure (AMI) applications at the 2013 Consumer Electronics Show (CES) in Las Vegas. RFMD’s single-chip RFFM6403 FEM delivers industry-leading performance, reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405 to 475 MHz frequency range, as well as for portable battery powered equipment and general 433/470 MHz ISM band systems.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, will host a conference call to review fiscal 2013 third quarter financial results on Tuesday, January 22, 2013, at 5:00 p.m. (ET).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD's newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz — 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.

RFMD returns to 2013 International CES with its industry-leading product portfolio and, as members of the ZigBee® Alliance, the company will be exhibiting in the ZigBee® Pavilion, Booth 20618 South Hall 1.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz — 960 MHz frequency band.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced a definitive agreement to acquire Amalfi Semiconductor (Amalfi), a leading fabless semiconductor company specializing in cost effective, high performance RF and mixed-signal ICs for the rapidly growing entry-level smartphone market.

RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of Alan Hallberg as the company's corporate vice president and chief marketing officer (CMO). In the role of CMO, Hallberg will oversee RFMD's global marketing activities and will be based in RFMD's growing Silicon Valley, CA, location.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled two new CATV control components, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch (SPDT).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, will host a conference call to review fiscal 2013 second quarter financial results on Tuesday, October 23, 2012, at 5:00 p.m. (ET). The conference call will be webcast live on the company's web site at http://www.rfmd.com (under "Investors").

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that all agenda items at RFMD's 2012 Annual Meeting of Shareholders were approved by the shareholders.

RF Micro Devices Inc. announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it received "Product of the Year" Awards from Cable Spotlight for three of its broadband cable television (CATV) products.

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD’s FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world’s leading WiFi chipset providers.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD's FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world's leading WiFi chipset providers.

Explore the RFMD® industry-leading RF and microwave product portfolio in booth 1210, with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, microwave MMICs, and custom foundry services. Read More

RF Micro Devices Inc. announced it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth 1210 at the Palais des congres Montreal, Canada.

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that company executives are scheduled to present at the 2012 Stephens Inc. Spring Investment Conference in New York, NY on Wednesday, June 6, 2012, at 9:00 a.m. Eastern Time.

RF Micro Devices, Inc. announced that company executives are scheduled to present at the 2012 Barclays Capital Global Technology, Media And Telecommunications Conference in New York, NY on Tuesday, May 22, 2012, at 10:15 a.m. Eastern Time.

RF Micro Devices Inc. announced it has teamed with Silicon Laboratories Inc. to deliver Sub-GHz solutions for a broad range of smart grid applications.

RF Micro Devices, Inc. announced the extension of RFMD's industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.

RF Micro Devices, Inc. reported financial results for its fiscal 2012 fourth quarter, ended March 31, 2012.

RF Micro Devices, Inc. announced it has been granted ISO/TS 16949 certification. The ISO/TS 16949 certificate is the highest international quality standard for the automotive industry, and ISO/TS 16949 certification demonstrates RFMD’s commitment to excellence in product design and manufacturing processes for automotive applications.

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor. Each device is packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.

RF Micro Devices, Inc. announced that Jerry Neal, co-founder and executive vice president of marketing, is retiring from RFMD, effective May 31, 2012.

Describes three design techniques and how each approaches system efficiency and power management from different angles

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms — the industry's first and only converged multimode, multiband (MMMB) power amplifiers.