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Freescale Semiconductor Inc.

Company Profile

Contact Information

Contact: Brian Thorsen
Title: -
Phone: (512) 895-2000

Location

Freescale Semiconductor Inc.
6501 William Cannon Drive West
Austin TX 78735
United States

Products

InGaP HBT MMG3004N

January 17, 2011
400-2200 MHz General Purpose Amplifier, P1dB: 27 dBm @ 2140 MHz Read More

InGaP HBT MMG3005

January 17, 2011
800-2200 MHz General Purpose Amplifier, P1db: 30dBm @ 2140 MHz Read More

InGaP HBT MMG3014

January 17, 2011
General Purpose Amplifier MMG3014NT1 Read More

LDMOS FET MRF6V10010N

January 17, 2011
960-1400 MHz, 10 Watts, Peak, 50V Pulsed Lateral N-Channel RF Power MOSFETs Read More

LDMOS FET MRF6V12250H

January 17, 2011
960-1215 MHz, 275 Watts, 50V Pulsed Lateral N-Channel RF Power MOSFETs Read More

LDMOS FET MRF6V12500H

January 17, 2011
965-1215 MHz, 500 Watts, 50V Pulsed Lateral N-Channel RF Power MOSFETs Read More

LDMOS FET MRF6V14300H

January 17, 2011
1200-1400 MHz, 330 Watts, 50V Pulsed Lateral N-Channel RF Power MOSFETs Read More

LDMOS FET MRF6V2010N

January 17, 2011
10-450 MHz, 10 Watts, 50V Lateral N-Channel Broadband RF Power MOSFETs Read More

LDMOS FET MRF6V3090N

January 17, 2011
470-860 MHz, 90 Watts PEP, 50V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs Read More

LDMOS FET MRF6V4300N

January 17, 2011
10-600 MHz, 300 Watts, 50V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs Read More

LDMOS FET MRF6VP11KH

January 17, 2011
10-150 MHz, 1000 Watts, 50V Lateral N-Channel Broadband RF Power MOSFET Read More

LDMOS FET MRF6VP121KH

January 17, 2011
965-1215 MHz, 1000 Watts Peak, 50V Pulsed Lateral N-Channel RF Power MOSFETs Read More

LDMOS FET MRF6VP3450H

January 17, 2011
470-860 MHz, 450 Watts, 50V Lateral N-Channel Broadband RF Power MOSFETs Read More

LDMOS FET MRF6VP41KH

January 17, 2011
10-500 MHz, 1000 Watts, 50V Lateral N-Channel Broadband RF Power MOSFETs Read More

Power Amplifier MRF6VP11KH

January 17, 2011
Operating in pulse mode at 27.5 MHz intended for ISM applications. Read More

News

A 50 V LDMOS Power Transistor for High Impedance Mismatch Applications

December 09, 2010
Freescale Semiconductor has developed a RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentially-destructive impedance mismatch conditions encountered in applications such as CO 2 lasers, plasma generators and magnetic resonance imaging (MRI) scanners. The new MRFE6VP61K25H FET is the... Read More

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