Pat Hindle, MWJ Editor
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Hindle
Pat Hindle is responsible for editorial content, article review and special industry reporting for Microwave Journal magazine and its web site in addition to social media and special digital projects. Prior to joining the Journal, Mr. Hindle held various technical and marketing positions throughout New England, including Marketing Communications Manager at M/A-COM (Tyco Electronics), Product/QA Manager at Alpha Industries (Skyworks), Program Manager at Raytheon and Project Manager/Quality Engineer at MIT. Mr. Hindle graduated from Northeastern University - Graduate School of Business Administration and holds a BS degree from Cornell University in Materials Science Engineering.

TriQuint and Win Lead GaAs Foundry Market

May 11, 2009
The latest Strategy Analytics report says that TriQuint and Win Semiconductors continue to control the market, increasing their collective share of the GaAs (gallium arsenide) foundry market from 67% in 2007 to 77% in 2008.

TriQuint held onto the top spot in 2008, benefiting from commercial opportunities as well as engagements in the US defense and aerospace industries. Win Semiconductors is by far the largest pure-play GaAs foundry, pushing TriQuint hard for the number one spot in 2008, with only one percentage point separating the two companies in overall market share.

"Strategy Analytics estimates that the total market for GaAs foundry grew 27% year-on-year in 2008 and was worth $311 million," noted Asif Anwar at Strategy Analytics. "The market for GaAs foundry services will continue to grow as dual-sourcing and fabless strategies become more prominent in the GaAs industry."

"Start-up companies and research institutes targeting niche and emerging markets may be finding that the tapeout costs of "cheap silicon" are too expensive in the current downturn," observed Stephen Entwistle, VP of the Strategic Technologies Practice. "This offers an additional opportunity for GaAs foundries to leverage the lower costs and higher performance capabilities offered by GaAs processes."
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