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| Departments Defense News: Strong Growth Ahead for Military Airborne Radio Semiconductor Market TASC Implements 3-D RFID Asset Management System for US Navy Lockheed Martin and Raytheon Partner for GMD Development and Sustainment Contract Harris Awarded Antenna Contract International Report: Study Addresses European Military Aerospace Development UK Government to Revolutionise Digital Infrastructure European Project on Integrated Electronic System-in-Package Solutions NGMN Alliance and TM Forum Sign Next Generation Network Agreement Commercial Market: Wireless Sensor Networks and RFID in Asia Skyworks Maintains PA Share Lead Low Bands to Dominate in LTE Mobile Devices Through 2014 Handset Semiconductor Revenue to Increase
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| MarketWatch ABI Research has just released a report that looks at the microwave tube market and concludes that it is currently safe from losing significant market share to new high power solid-state devices such as GaN. This was the same conclusion offered by David Zavadil of Teledyne MEC back in 2008. Here's Zavadil's explanation why. ![]() |
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| Departments Defense News: AEGIS Upgrades Drive Advanced Electronic Market Demand Lockheed Martin GPS III Team in Critical Design Review Phase Raytheon-Boeing Team Fires First Joint Air-to-Ground Missile Harris Corp. Receives Order for High-frequency Radio Systems International Report: GSA Reports Global March of Mobile Broadband Mobile Broadband Infrastructure: BuNGee Project Bounces into Action Centre for Energy-efficient Telecommunications Established in Australia AESA Radar Centre of Excellence for Brazil Commercial Market: 3G Handset Sales Eclipse 2G Market UMS USA Inc. Celebrates One Year of Exercise Cellular and Mobile Broadband PC Modem Market Up 55 Percent Raytheon Installs Frost Protection System in Canadian Vineyard Latest Trends in Mobile Handset Design
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UltraCMOSTM Poised for High Growth
Peregrine's recently announced partnership with IBM leverages the company's high performance devices with a new level of manufacturing capacity as next-generation, silicon-on-sapphire technology will be based on IBM's 180-nm process on 200-mm wafers.
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