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ARTICLES

A 3 V Small Chip Size GSM HBT Power MMIC with 56 Percent PAE

A three-stage 56 percent power added efficiency InGaP/GaAs hetero-junction bipolar transistor power MMIC for use in Global System for Mobile Communications applications
April 1, 2001
TECHNICAL FEATURE A 3 V Small Chip Size GSM HBT Power MMIC with 56 Percent PAE This article describes a three-stage 56 percent power added efficiency (PAE) InGaP/GaAs hetero-junction bipolar transistor (HBT) power MMIC for use in Global System for Mobile Communications (GSM) applications at 900 MHz. An output...
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