J.E. Mueller, U. Gerlach, G.L. Madonna, M. Pfost, R. Schultheis and P. Zwicknagl

TECHNICAL FEATURE A 3 V Small Chip Size GSM HBT Power MMIC with 56 Percent PAE This article describes a three-stage 56 percent power added efficiency (PAE) InGaP/GaAs hetero-junction bipolar transistor (HBT) power MMIC for use in Global System for Mobile Communications (GSM) applications at 900 MHz. An output...