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ARTICLES

Thermal Modeling of Heterojunction Bipolar Transistors with Pulsed I-V Measurements

An extraction procedure for thermal parameters of high power heterojunction bipolar transitors with pulsed I-V measurements
March 1, 2001
TECHNICAL FEATURE Thermal Modeling of Heterojunction Bipolar Transistors with Pulsed I-V Measurements An extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) with pulsed I-V measurements is presented. The pulsed measurements become essential to model thermal effect and frequency dispersion of high frequency devices. The measurement...
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