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ARTICLES

A Linear LDMOS Amplifier for EDGE GSM Applications

Results of a class AB demonstration circuit using a BLF1820-70 LDMOS transistor
May 1, 2001
PRODUCT FEATURE A Linear LDMOS Amplifier for EDGE GSM Applications Philips Semiconductors Foxboro, MA Cellular infrastructure providers are ramping up plans to augment present GSM systems with a new Enhanced Data rate for GSM Evolution (EDGE) GSM system. This new format adds additional challenges to the design of the...
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A Linear LDMOS Amplifier for 3GPP Applications

An introduction to BLF2022-90, a single-ended 90W N-channel linear base station amplifier
March 1, 2001
PRODUCT FEATURE A Linear LDMOS Amplifier for 3GPP Applications Philips Semiconductor Foxboro, MA W ith the introduction of digital modulation formats and the trend towards multi-carrier amplifiers, base station power amplifiers require the use of transistors with high peak power capability. The amplifier is required to meet stringent linearity...
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