Articles by Robert H. Caverly, Nikolai V. Drozdovski and Michael J. Quinn

Technical Feature Gallium Nitride-based Microwave and RF Control Devices This article describes origins of the use of high electron mobility field-effect transistors (HEMT) based on AlGaN/GaN technology as control components for high power microwave and RF control applications. Robert H. Caverly, Nikolai V. Drozdovski and Michael J. Quinn Villanova...