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ARTICLES

Gallium Nitride-based Microwave and RF Control Devices

Impact of AlGaN/GaN technology on microwave and RF control devices
Technical Feature Gallium Nitride-based Microwave and RF Control Devices This article describes origins of the use of high electron mobility field-effect transistors (HEMT) based on AlGaN/GaN technology as control components for high power microwave and RF control applications. Robert H. Caverly, Nikolai V. Drozdovski and Michael J. Quinn Villanova...
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