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ARTICLES

A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions

Modifications to the Dortu-Muller DC drain current model for GaAs MESFET/HEMT devices that enable the dynamic output characterisitcs of the device to be simulated under different temperature and static bias conditions
J.M. Cairon, A. Tazon, T. Fernandez, C. Navarro, A. Mediavilla and J. Rodriguez-Tellez
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TECHNICAL FEATURES A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions J.M. Cairon, A. Tazon, T. Fernandez, C. Navarro and A. Mediavilla University of Cantabria Cantabria, Spain J. Rodriguez-Tellez University of Bradford West Yorkshire, UK Modifications to the Dortu-Muller DC drain current model...
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