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ARTICLES

A 165 W LDMOS FET for 900 MHz Operation

165 W laterally diffused metal-oxide semiconductor (LDMOS) FETs for amplifier applications from 860 to 900 MHz are featured on this month's cover
Ericsson RF Power Products
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A 165 W LDMOS FET for 900 MHz Operation An internally matched, common source, N-channel, enhancement-mode laterally diffused metal-oxide semiconductor (LDMOS) FET intended for large-signal amplifier applications in the 860 to 900 MHz frequency range has been developed. The model PTF 10100 LDMOS FET is rated at 165 W...
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