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ARTICLES

60 and 120 W, 2 GHz LDMOS FETs

Two new laterally diffused metal-oxide semiconductor (LDMOS) FETs developed for code-division/time-division multiple access applications from 1.8 to 2 GHz
60 and 120 W, 2 GHz LDMOS FETs Ericsson Components, RF Power Products Morgan Hill, CA The dramatic increase in cellular traffic has necessitated the use of spread spectrum techniques such as time-division multiple access (TDMA) and code-division multiple access (CDMA). These modulation methods have significantly tightened the linearity...
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FETs that Address the Linearity Challenge

Laterally diffused metal-oxide semiconductor FETs designed for use in base station applications are featured on this month's cover
FETs that Address the Linearity Challenge Ericsson Components, RF Power Products Morgan Hill, CA The volume of cellular base station traffic in today’s market is skyrocketing. This increasing traffic can be handled only by improving the linearity of the RF power amplifiers, which are the nucleus of these base...
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