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ARTICLES

Nonlinear Waveform Prediction in Fast Microwave Circuits

A time domain, transient analysis simulator that allows the prediction of waveforms in fast, nonlinear circuits in which accurate S-parameter data can be imported and used
Nonlinear Waveform Prediction in Fast Microwave Circuits Optotek Ltd. Kanata, Ontario, Canada MMICAD WAVEFORM,™ a new time domain, transient analysis simulator, allows the prediction of waveforms in strongly nonlinear circuits in which accurate S-parameter data can be imported and used in the simulation. The new time domain software is...
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Advanced Large-signal Models for Transistor Parameter Extraction Software

An upgraded version of the LASIMO software that can conveniently make MESFET measurements and fit the data to advanced large-signal models
Advanced Large-signal Models for Transistor Parameter Extraction Software Optotek Ltd. Kanata, Ontario, Canada Accurate model generation is becoming a progressively more important part of the computer-aided-design process. Of special importance are large-signal models capable of accurately predicting the performance of nonlinear circuits. LASIMO large- and small-signal modeling software 1...
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A Major Schematic Capture/Layout Package Upgrade

An upgraded software package that offers an integrated project-based design capability
A Major Schematic Capture/Layout Package Upgrade Optotek Ltd. Kanata, Ontario, Canada Version 2 of the MMICAD™ SCHEMATIC/LAYOUT package has been released to address the design engineer's need for efficient, cost-effective design tools via an integrated project-based design function. This new capability involves tight bidirectional integration between schematic capture, the...
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Large-signal Modeling of MESFETs and HEMTs

The LASIMO software that facilitates the development of large-signal models is featured on this month's cover
Large-signal Modeling of MESFETs and HEMTs Optotek Ltd. Kanata, Ontario, Canada Accurate device models are essential for the efficient use of both linear and nonlinear simulation programs. Conventional procedures for extracting MESFET and high electron mobility transistor (HEMT) large-signal models are complex, time consuming and require the use of...
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