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ARTICLES

155 GHz MMIC LNA's with 12dB Gain Fabricated Using a High Yield InP HEMT MMIC Process

A D-band InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) MMIC low noise amplifier (LNA) developed using a high performance 0.1 ┬Ám passivated InP HEMT MMIC process
R. Lai, H. Wang, Y.C. Chen, T. Block, P.H. Liu, D.C. Streit. D. Tran. M. Barsky, W. Jones, P. Siegel and T. Gaier
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155 GHz MMIC LNAs with 12 dB Gain Fabricated Using a High Yield InP HEMT MMIC Process A highly robust, high performance 0.1 mm passivated InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) MMIC process with frequency capability to 200 GHz and beyond has been developed. This process has demonstrated...
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