Articles by Richardson RFPD / Arrow RF & Power

Richardson RFPD, Inc. announced the availability and full design support capabilities for Hittite Microwave products from Analog Devices, Inc.  Customers will benefit from the complete solutions that address the performance, reliability, and time-to-market requirements of an ever-widening range of ADI applications.

Richardson RFPD Inc. announced the availability from stock and full design support capabilities for a new 1.2 kV, 80 m Ω all-SiC six-pack (three-phase) module and associated six-channel gate driver from Cree, Inc. The CCS020M12CM2 includes C2M™ MOSFETs and Z-Rec™ diodes.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new 1.7 kV, 8.0 m Ω, 300 A all-silicon carbide half-bridge module and associated 1.7 kV driver from Cree, Inc. The CAS300M17BM2 includes C2M™ MOSFETs and Z-Rec™ diodes and features ultra-low loss and high-frequency operation.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new RF single-pole four-throw switch from Peregrine Semiconductor Corporation. The PE423641 is HaRP™ technology-enhanced and features insertion loss of 0.5 dB and isolation of 32 dB at 1000 MHz, and IIP3 of +68 dBm.

Richardson RFPD Inc. announced the availability and full design support capabilities for two 2.7 to 3.7 GHz packaged GaN power amplifiers from TriQuint. The TGA2583-SM and TGA2585-SM are designed using TriQuint’s production 0.25-μm GaN on SiC process. The new devices can operate under both pulse and continuous wave (CW) conditions, and both feature RF ports that are fully matched to 50 ohms.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new multiple input and multiple output, RF transceiver from Lime Microsystems. The LMS7002M is a fully-integrated, multiband, multi-standard, programmable MIMO RF transceiver.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new SiC MOSFET evaluation kit from Cree, Inc. The KIT8020CRD8FF1217P-1 evaluation kit can be used to demonstrate the high performance of Cree’s 1200 V SiC MOSFETs and SiC Schottky diodes.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new four-stage E-band driver amplifier from M/A-COM Technology Solutions. The MAAM-011167 is a bare die power amplifier that operates from 71 to 86 GHz and provides 18 dB small signal gain. The input and output are matched to 50Ω with bond wires to external board.

Richardson RFPD Inc. announced the availability and full design support capabilities for three new 1200 V, 80 mΩ SiC MOSFETs from Microsemi Corporation. The new MOSFETs are built on SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness.

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.