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ARTICLES

Fujitsu develops GaN PA with world's highest output performance for W-Band wireless transmissions

Fujitsu Ltd. and Fujitsu Laboratories Ltd. announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75 to 110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.


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