Articles by RF Micro Devices Inc.

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD’s FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world’s leading WiFi chipset providers.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFVA0016 — a highly integrated one-quarter watt (1/4W) analog-controlled variable gain amplifier (VGA).

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

Explore the RFMD® industry-leading RF and microwave product portfolio in booth 1210, with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, microwave MMICs, and custom foundry services.

RF Micro Devices Inc. announced it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth 1210 at the Palais des congres Montreal, Canada.

RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that company executives are scheduled to present at the 2012 Stephens Inc. Spring Investment Conference in New York, NY on Wednesday, June 6, 2012, at 9:00 a.m. Eastern Time.

RF Micro Devices, Inc. announced that company executives are scheduled to present at the 2012 Barclays Capital Global Technology, Media And Telecommunications Conference in New York, NY on Tuesday, May 22, 2012, at 10:15 a.m. Eastern Time.

RF Micro Devices Inc. announced it has teamed with Silicon Laboratories Inc. to deliver Sub-GHz solutions for a broad range of smart grid applications.

RF Micro Devices, Inc. announced the extension of RFMD's industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.