Articles by RF Micro Devices Inc.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of Alan Hallberg as the company's corporate vice president and chief marketing officer (CMO). In the role of CMO, Hallberg will oversee RFMD's global marketing activities and will be based in RFMD's growing Silicon Valley, CA, location.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled two new CATV control components, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch (SPDT).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, will host a conference call to review fiscal 2013 second quarter financial results on Tuesday, October 23, 2012, at 5:00 p.m. (ET). The conference call will be webcast live on the company's web site at http://www.rfmd.com (under "Investors").

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms — the industry's first and only converged multimode, multiband (MMMB) power amplifiers.

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that all agenda items at RFMD's 2012 Annual Meeting of Shareholders were approved by the shareholders.

RF Micro Devices Inc. announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it received "Product of the Year" Awards from Cable Spotlight for three of its broadband cable television (CATV) products.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, reported financial results for the Company's fiscal 2013 first quarter, ended June 30, 2012.