- Buyers Guide
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD's newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz — 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.
RFMD returns to 2013 International CES with its industry-leading product portfolio and, as members of the ZigBee® Alliance, the company will be exhibiting in the ZigBee® Pavilion, Booth 20618 South Hall 1.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz — 960 MHz frequency band.
RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.
RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TQP3M9036, internally matched, low noise amplifier combining a 0.45 dB noise figure with 19 dB gain and 35 dBm OIP3 in a 2 x 2 mm DFN package.
Micrel Inc., an industry leader in high-performance linear and power solutions, LAN, and timing and communications solutions, announces ClockWorks Fusion, a revolutionary clock generation product family that integrates the crystal, frequency synthesizer and fan-out buffer to deliver the industry’s highest level of integration. The MX85 is the first in a series of devices aimed at simultaneously meeting the ultra-low jitter (less than 200fs) and integration requirements of 10/40/100 Gigabit Ethernet, PCIe 2.0/3.0, Fibre Channel, SAS/SATA, and high speed reference clocking for FPGA and SerDesapplications.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced a definitive agreement to acquire Amalfi Semiconductor (Amalfi), a leading fabless semiconductor company specializing in cost effective, high performance RF and mixed-signal ICs for the rapidly growing entry-level smartphone market.
RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of
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